Abstract:The light absorption of polysilicon planar junctions can be improved using nanostructured top surfaces due to their enhanced light harvesting properties. Nevertheless, associated with the higher surface, the roughness caused by plasma etching and defects located at the grain boundary in polysilicon, the concentration of the recombination centers increases, leading to electrical performance deterioration. In this work, we demonstrate that wet oxidation combined with hydrogen passivation using SiN(x):H are the k… Show more
“…Phosphorous ion implantation was performed using a dose of 10 14 at/cm 2 at 180 keV, followed by an annealing at 900 °C during 5 min to activate the dopants. Detailed descriptions of the technological process can be found in our previous works [24, 25]. Fig.…”
Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposition (ALD) technique. This paper aims at presenting correlated structural/electrical studies for the passivation effect of alumina on Si junctions to obtain optimal thickness of alumina passivation layer. High-resolution transmission electron microscope (HRTEM) observations coupled with energy dispersive X-ray (EDX) measurements are used to determine the thickness of alumina at atomic scale. The correlated electrical parameters are measured with both solar simulator and Sinton’s Suns-Voc measurements. Finally, an optimum alumina thickness of 1.2 nm is thus evidenced.
“…Phosphorous ion implantation was performed using a dose of 10 14 at/cm 2 at 180 keV, followed by an annealing at 900 °C during 5 min to activate the dopants. Detailed descriptions of the technological process can be found in our previous works [24, 25]. Fig.…”
Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposition (ALD) technique. This paper aims at presenting correlated structural/electrical studies for the passivation effect of alumina on Si junctions to obtain optimal thickness of alumina passivation layer. High-resolution transmission electron microscope (HRTEM) observations coupled with energy dispersive X-ray (EDX) measurements are used to determine the thickness of alumina at atomic scale. The correlated electrical parameters are measured with both solar simulator and Sinton’s Suns-Voc measurements. Finally, an optimum alumina thickness of 1.2 nm is thus evidenced.
“…a) shows a close packed monolayer of monodisperse SiO 2 nanospheres with diameter D (D=2r) of 400 nm, assembled on Si substrate by using LB technique. The size and spacing of the NPs were further tuned by using isotropic RIE of SiO 2[33,34]. Ag films were then deposited on SiO 2 nanospheres as shown infigure 2(b).Figure 2(c) displays a top-view SEM image of the Ag deposition in one particular area.…”
This paper describes an original design leading to the field effect passivation of Si n-p junctions. Ordered Ag nanoparticle (Ag-NP) arrays with optimal size and coverage fabricated by means of nanosphere lithography and thermal evaporation, were embedded in ultrathin-AlO/SiN :H stacks on the top of implanted Si n-p junctions, to achieve effective surface passivation. One way to characterize surface passivation is to use photocurrent, sensitive to recombination centers. We evidenced an improvement of photocurrent by a factor of 5 with the presence of Ag NPs. Finite-difference time-domain (FDTD) simulations combining with semi-quantitative calculations demonstrated that such gain was mainly due to the enhanced field effect passivation through the depleted region associated with the Ag-NPs/Si Schottky contacts.
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