Local Schottky contacts of embedded Ag nanoparticles in Al2O3/SiNx:H stacks on Si: a design to enhance field effect passivation of Si junctions

Elmi, Omar Ibrahim; Cristini-Robbe, Odile; Chen, M Y; Wei, Bin; Bernard, Rémy; Yarekha, Dmitri; Okada, Étienne; Ouendi, Saliha; Portier, X.; Gourbilleau, Fabrice; Xu, Tao; Stiévenard, D.

doi:10.1088/1361-6528/aac032

Cited by 6 publications

(4 citation statements)

References 39 publications

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“…One ALD cycle deposited one monolayer which equals to 0.12 nm. Junctions without alumina ( d = 0), i.e., with unpassivated metal-silicon contacts, have been realized, but the PCE is very low, only 0.4% [9]. The alumina deposition was carried out in a PICOSUN R200 system through a thermal process.…”

Section: Methodsmentioning

confidence: 99%

“…ALD allows a good control of the thickness down to atomic scale, while the use of alumina leads to a good chemical passivation of interface states as well as to an efficient field effect passivation through localized charges in the oxide layer [8]. For example, Elmi et al showed that the introduction of embedded Ag nanoparticles in a thin alumina layer can effectively enhance the field effect passivation [9]. It is known that the sign and the density of the localized charges as well as the thickness of alumina layer are important parameters for surface passivation.…”

Section: Introductionmentioning

confidence: 99%

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Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

et al. 2019

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Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposition (ALD) technique. This paper aims at presenting correlated structural/electrical studies for the passivation effect of alumina on Si junctions to obtain optimal thickness of alumina passivation layer. High-resolution transmission electron microscope (HRTEM) observations coupled with energy dispersive X-ray (EDX) measurements are used to determine the thickness of alumina at atomic scale. The correlated electrical parameters are measured with both solar simulator and Sinton’s Suns-Voc measurements. Finally, an optimum alumina thickness of 1.2 nm is thus evidenced.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

et al. 2019

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“…The height and periodicity of the nanopillars in the Si mould are optimized for realizing the minimal ambient reflection by the ST-OSCs. The fabrication process of the photonic-structured Si mould is described in our previous works [48][49][50] and illustrated in Figure S9, Supporting Information. An inverted polydimethylsiloxane (PDMS) photonic-structured AR coating formed on the Si mould was carefully peeled-off and attached on the glass side of the ST-OSCs.…”

Section: St-oscs With a 2-d Photonic-structured Ar Coatingmentioning

confidence: 99%

High‐Throughput Computing Guided Low/High Index Optical Coupling Layer for Record‐Performance Semitransparent Organic Solar Cells

Deng

Zhao

et al. 2023

Advanced Energy Materials

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Semitransparent organic solar cells (ST‐OSCs) can be made in different colors, allowing light to pass through, and yet absorb enough visible and near‐infrared (NIR) light to generate electricity. However, it remains a challenge to achieve high performing ST‐OSCs over the two competing indexes of power conversion efficiency (PCE) and average visible transmittance (AVT). This work reports an effort to develop record‐performance ST‐OSCs using a low/high index optical coupling layer (OCL) and a 2D photonic‐structured antireflective (AR) coating. High‐throughput optical screening is used to improve the understanding of OCL structure−performance relationships and the predicting of NIR absorption enhancement for ST‐OSCs. The concurrent use of a low/high index Na3AlF6 (170 nm)/ZnS (110 nm) OCL, identified among about 200 thousand simulated device configurations and a 900 nm pitch‐sized 2D photonic‐structured AR coating, fabricated using nanoimprint lithography, enables the record‐performance ternary PM6:BTP‐eC9:L8‐BO‐based ST‐OSCs, achieving simultaneously a record‐high PCE of 15.2%, a high AVT of 32%, an impressive light utilization efficiency of 4.86%, and a favorable color‐rendering index of 82. The results of the ST‐OSCs demonstrated in this work provide an attractive option for a plethora of applications in self‐powered greenhouses and building‐integrated photovoltaic systems.

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“…An effective method is to use the low-temperature atomic layer deposition (ALD) processing, taking its unique advantage of precise thickness control, excellent conformal and pin-hole free coverage ability [23,24]. Indeed, ALD deposited metal oxide films are usually introduced in commercial silicon based solar cell production, whereas there are few literatures about the OODs using this method [25,26].…”

Section: Introductionmentioning

confidence: 99%

Mechanically and thermally stable, transparent electrodes with silver nanowires encapsulated by atomic layer deposited aluminium oxide for organic optoelectronic devices

Wang

Ling

et al. 2020

Organic Electronics

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Flexible conductive electrodes are essential components for organic optoelectronic devices (OODs). One of the main challenges in the development of flexible OODs is to achieve an optimal combination of photoelectrical properties, enhanced flexibility and stability in transparent conductive electrodes (TCEs). In this work, highperformance flexible nonfullerene organic solar cells (OSCs) and polymer light-emitting diodes (PLEDs) based on TCEs of silver nanowires (AgNWs) encapsulated with an ultra-thin atomic layer deposited aluminum oxide (Al 2 O 3) have been demonstrated. The hybrid AgNWs/Al 2 O 3 composite electrodes with enhanced thermal, ambient and mechanical stabilities enable an efficient flexible transparent electrode with high transmittance and conductivity, which can synergistically optimize the device performance of nonfullerene OSCs and PLEDs. The maximum power conversion efficiency value of 7.03%, as well as a current efficiency of 7.26 cd A À 1 for flexible OSCs and PLEDs are achieved, respectively. Notably, excellent flexibility, long-term atmospheric and thermal stabilities have been systematically investigated and demonstrated. These results provide a new design platform for the fabrication of high-performance, flexible transparent electrodes, which can be further explored in a wide range of organic optoelectronics field.

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Local Schottky contacts of embedded Ag nanoparticles in Al₂O₃/SiN_x:H stacks on Si: a design to enhance field effect passivation of Si junctions

Cited by 6 publications

References 39 publications

Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

High‐Throughput Computing Guided Low/High Index Optical Coupling Layer for Record‐Performance Semitransparent Organic Solar Cells

Mechanically and thermally stable, transparent electrodes with silver nanowires encapsulated by atomic layer deposited aluminium oxide for organic optoelectronic devices

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