Enhancement of electrical stability of metal oxide thin-film transistors against various stresses

Kim, Young-Seok; Kim, Choongik

doi:10.1039/d3tc00417a

Cited by 13 publications

(2 citation statements)

References 144 publications

(208 reference statements)

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“…The positive shift in the transfer curves of the oxide TFTs in the PBS test originated from the charge-trapping phenomenon in the channel region of the oxide semiconductors. Specifically, it arose from two distinct mechanisms: (i) the active defect state of the oxide semiconductor in the channel region and (ii) electron-oxygen gas molecular interactions in the back-channel region [27,28]. The backchannel regions of the InZnO films were exposed to the same ambient conditions without a passivation layer.…”

Section: Resultsmentioning

confidence: 99%

Composition Engineering of Indium Zinc Oxide Semiconductors for Damage-Free Back-Channel Wet Etching Metallization of Oxide Thin-Film Transistors

Zhang,

Cho

2023

Micromachines

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In contrast to lift-off and shadow mask processes, the back-channel wet etching (BCWE) process is suitable for industrial-scale metallization processes for the large-area and mass production of oxide thin-film transistors (TFTs). However, chemical attacks caused by the corrosive metal etchants used in the BCWE process cause unintended performance degradation of oxide semiconductors, making it difficult to implement oxide TFT circuits through industrial-scale metallization processes. Herein, we propose composition engineering of oxide semiconductors to enhance the chemical durability and electrical stability of oxide semiconductors. The chemical durability of InZnO against Al etchants can be improved by increasing the content of indium oxide, which has a higher chemical resistance than zinc oxide. As a result, A damage-free BCWE-based metallization process was successfully demonstrated for oxide TFTs using In-rich InZnO semiconductors. Furthermore, In-rich InZnO TFTs with wet-etched Al electrodes exhibited electrical performance comparable to that of lift-off Al electrodes, without chemical attack issues.

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Section: Resultsmentioning

confidence: 99%

Composition Engineering of Indium Zinc Oxide Semiconductors for Damage-Free Back-Channel Wet Etching Metallization of Oxide Thin-Film Transistors

Zhang,

Cho

2023

Micromachines

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“…Therefore, the origin of bias stability must be studied to determine the robustness of the device. Extreme V TH shifts and SS degradation occurs when negative gate bias and illumination stress are simultaneously applied [ 15 , 16 , 17 ]. When the oxide TFTs act as a switch rather than the current supplier to the OLEDs in displays, negative bias illumination stress (NBIS) is critical because the switching TFTs are typically turned off by negative gate bias [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Na,

Park,

Park

et al. 2024

Nanomaterials

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The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial threshold voltage (VTH) and its origin were analyzed by understanding the roles of slow and fast traps in solution-processed oxide TFTs. To control the initial VTH of oxide TFTs, the indium oxide (InOx) semiconductor was doped with aluminum (Al), which functioned as a carrier suppressor. The concentration of oxygen vacancies decreased as the Al doping concentration increased, causing a positive VTH shift in the InOx TFTs. The VTH shift (∆VTH) caused by PBS increased exponentially when VTH was increased, and a distinct tendency was observed as the gate bias stress increased due to a high vertical electric field in the oxide dielectric. In addition, the recovery behavior was analyzed to reveal the influence of fast and slow traps on ∆VTH by PBS. Results revealed that the effect of the slow trap increased as the VTH moved in the positive direction; this occured because the main electron trap location moved away from the interface as the Fermi level approached the conduction band minimum. Understanding the correlation between VTH and PBS instability can contribute to optimizing the fabrication of oxide TFT-based circuits for electronic applications.

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Hypoeutectic Liquid Metal Printing of 2D Indium Gallium Oxide Transistors

Agnew,

Tiwari,

Ong

et al. 2024

Small

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Abstract2D native surface oxides formed on low melting temperature metals such as indium and gallium offer unique opportunities for fabricating high‐performance flexible electronics and optoelectronics based on a new class of liquid metal printing (LMP). An inherent property of these Cabrera‐Mott 2D oxides is their suboxide nature (e.g., In2O3−x), which leads high mobility LMP semiconductors to exhibit high electron concentrations (ne > 1019 cm−3) limiting electrostatic control. Binary alloying of the molten precursor can produce doped, ternary metal oxides such as In‐X‐O with enhanced electronic performance and greater bias‐stress stability, though this approach demands a deeper understanding of the native oxides of alloys. This work presents an approach for hypoeutectic rapid LMP of crystalline InGaOx (IGO) at ultralow process temperatures (180 °C) beyond the state of the art to fabricate transistors with 10X steeper subthreshold slope and high mobility (≈18 cm2 Vs−1). Detailed characterization of IGO crystallinity, composition, and morphology, as well as measurements of its electronic density of states (DOS), show the impact of Ga‐doping and reveal the limits of doping induced amorphization from hypoeutectic precursors. The ultralow process temperatures and compatibility with high‐k Al2O3 dielectrics shown here indicate potential for 2D IGO to drive low‐power flexible transparent electronics.

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Enhancement of electrical stability of metal oxide thin-film transistors against various stresses

Abstract: Metal-oxide semiconductors are considered promising alternative materials in the field of flat panel display industry due to their advantages, such as high mobility, transparency, uniformity, low production cost, and large-area processability.

Cited by 13 publications

References 144 publications

Composition Engineering of Indium Zinc Oxide Semiconductors for Damage-Free Back-Channel Wet Etching Metallization of Oxide Thin-Film Transistors

Composition Engineering of Indium Zinc Oxide Semiconductors for Damage-Free Back-Channel Wet Etching Metallization of Oxide Thin-Film Transistors

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Hypoeutectic Liquid Metal Printing of 2D Indium Gallium Oxide Transistors

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