Enhancement of GaN-Based Light-Emitting Diodes Transferred From Si (111) Substrate Onto Electroplating Cu Submount With TiO$_{2}$/SiO$_{2}$–Al Omnidirectional Reflector

Yang, Yibin; Hu, Gangwei; Xiang, Peng; Liu, Minggang; Chen, Weijie; Han, Xiumei; Hu, Guoheng; Lin, Yan; Lin, Xiangmin; Wen-Jie, Zang; Wu, Zhisheng; Liu, Yang; Zhang, Baijun

doi:10.1109/jdt.2014.2342221

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Enhancement of GaN-Based Light-Emitting Diodes Transferred From Si (111) Substrate Onto Electroplating Cu Submount With TiO$_{2}$/SiO$_{2}$–Al Omnidirectional Reflector

Cited by 2 publications

References 35 publications

Fabrication and Properties of Thin-Film InGaN/GaN Multiple Quantum Well Light-Emitting Diodes Transferred From Si (1 1 1) Substrate Onto a Thin Epoxy Resin Carrier

Fabrication and Properties of Thin-Film InGaN/GaN Multiple Quantum Well Light-Emitting Diodes Transferred From Si (1 1 1) Substrate Onto a Thin Epoxy Resin Carrier

III-Nitride Semiconductor LEDs Grown on Silicon and Stress Control of GaN Epitaxial Layers

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