Fabrication and Properties of Thin-Film InGaN/GaN Multiple Quantum Well Light-Emitting Diodes Transferred From Si (1 1 1) Substrate Onto a Thin Epoxy Resin Carrier

In this work, we present a stress-free AlN film with improved crystal quality assisted by h-BN and demonstrate the mechanical exfoliation of wafer-scale single-crystal AlN freestanding membrane and reveal the controllable exfoliation mechanism of AlN. Uniform and continuous wafer-scale h-BN is directly grown on c-plane sapphire using a flow modulation epitaxy mode by metal-organic chemical vapor deposition. The nucleation and evolution processes of quasi-van der Waals epitaxy (QvdWE) of AlN on h-BN are revealed. It is found that O2-plasma-treated h-BN can effectively promote the nucleation islands of AlN and contribute to the release of biaxial stress and the reduction of dislocation density in the epilayers. Eventually, the QvdWE growth of a stress-free AlN film (0.08 GPa) is achieved, and wafer-scale mechanical exfoliation of the AlN membrane has been realized. This work provides an effective strategy for the quality improvement of III-nitride films and paves the way for the vertical structure and flexible deep-ultraviolet optoelectronic devices.

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Fabrication and Properties of Thin-Film InGaN/GaN Multiple Quantum Well Light-Emitting Diodes Transferred From Si (1 1 1) Substrate Onto a Thin Epoxy Resin Carrier

Cited by 5 publications

References 20 publications

A review on GaN-based two-terminal devices grown on Si substrates

A review on GaN-based two-terminal devices grown on Si substrates

III-nitride semiconductor membrane electronics and optoelectronics for heterogeneous integration

Controlled exfoliation of wafer-scale single-crystalline AlN film on MOCVD-grown layered h-BN

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