Enhancement of L2 1 order and spin-polarization of Heusler alloy Co 2 MnSi thin film by Ag alloying

Bosu, S.; Sakuraba, Yuya; Sasaki, Taisuke; Li, S.; Hara, Kazuhiro

doi:10.1016/j.scriptamat.2015.08.003

Cited by 6 publications

(1 citation statement)

References 26 publications

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“…A negative AMR is predicted to be an indicator of half-metallic conduction 69,70 , opposite to the ordinary positive AMR in transition metal ferromagnets and alloys 66 . This has been supported by measurements of negative AMR in half-metallic Heusler thin films [71][72][73][74] . Hence, the negative AMR of Figure 6 indicates the BFMO is half-metallic below ∼250-300 K.…”

Section: Discussionmentioning

confidence: 70%

Indications of spin polarized transport in Ba$_2$FeMoO$_6$ thin films

Granville,

Farrell,

Hyndman

et al. 2017

Preprint

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We have investigated the magnetic and magnetotransport properties of Ba2FeMoO6 thin films produced by pulsed laser deposition from optimized bulk material. The films are comprised of grains of crystalline Ba2FeMoO6 with a disordered grain boundary region that lowers the net saturation magnetization of the film and prevents full magnetic alignment below a Curie temperature T C∼305 K. Magnetotransport measurements point to the Ba2FeMoO6 grains retaining the high spin polarization of a half-metal up to T C, while the grain boundaries greatly reduce the spin polarization of the intergrain electrical current due to spin-flip scattering. Our results show that a strong spin polarization of the electronic charge carriers is present even in Ba2FeMoO6 films that do not show the ideal bulk magnetic character.

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