Enhancement of light-extraction efficiency of SiN<i>x</i> light emitting devices through a rough Ag island film

Wang, Rui; Li, Dongsheng; Yang, Deren; Que, Duanlin

doi:10.1063/1.3678632

Cited by 24 publications

(45 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Additionally, a novel horizontal multi-slot structure was proposed 35 to enhance the emission efficiency, in which the energy back-transfer and FCA were suppressed under lateral carrier injection because of unique photon confinement 36 . Another method to improve light source performance is the introduction of a surface plasmon (SP) into the light-emitting device because the SP could increase the spontaneous emission rate and IQE 37,38 . Unfortunately, the enhanced wavelength is only effective in the visible region.…”

Section: Er-related Light Sourcementioning

confidence: 99%

On-chip light sources for silicon photonics

2015

View full text Add to dashboard Cite

Serving as the electrical to optical converter, the on-chip silicon light source is an indispensable component of silicon photonic technologies and has long been pursued. Here, we briefly review the history and recent progress of a few promising contenders for on-chip light sources in terms of operating wavelength, pump condition, power consumption, and fabrication process. Additionally, the performance of each contender is also assessed with respect to thermal stability, which is a crucial parameter to consider in complex optoelectronic integrated circuits (OEICs) and optical interconnections. Currently, III-V-based silicon (Si) lasers formed via bonding techniques demonstrate the best performance and display the best opportunity for commercial usage in the near future. However, in the long term, direct hetero-epitaxial growth of III-V materials on Si seems more promising for low-cost, high-yield fabrication. The demonstration of high-performance quantum dot (QD) lasers monolithically grown on Si strongly forecasts its feasibility and enormous potential for on-chip lasers. The superior temperature-insensitive characteristics of the QD laser promote this design in large-scale high-density OEICs. The Germanium (Ge)-on-Si laser is also competitive for large-scale monolithic integration in the future. Compared with a III-V-based Si laser, the biggest potential advantage of a Ge-on-Si laser lies in its material and processing compatibility with Si technology. Additionally, the versatility of Ge facilitates photon emission, modulation, and detection simultaneously with a simple process complexity and low cost.

show abstract

Section: Er-related Light Sourcementioning

confidence: 99%

On-chip light sources for silicon photonics

2015

View full text Add to dashboard Cite

show abstract

“…This problem seriously hindered the realization of high external quantum efficiency (EQE) of LEDs. Some methods toward improving the LEE of LED devices have been proposed, mainly including photonic crystal (PC) [2,3], localized surface plasmons (LSPs) [4][5][6], patterned substrate [7] and surface roughening [8][9][10][11][12]. Specifically, surface roughening is widely accepted on account of its simple and efficient characteristics.…”

Section: Introductionmentioning

confidence: 99%

Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

Xiang-Jing

Zhang

et al. 2014

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

The following paper presents a study on the performance of InGaN/GaN-based light-emitting diodes (LEDs) with a nano-roughened p-GaN surface, which were grown by metal-organic chemical vapor deposition. This nano-roughened p-GaN surface was obtained by using nitrogen (N 2 ) as cyclopentadienyl magnesium (Cp 2 Mg) carrier gas during the growth of p-GaN layer. Research results show that the surface roughness of p-GaN layer is influenced by the injection flow of N 2 and the injection time of N 2 . Under the optimal process condition, the light output power of LED with a nano-roughened p-GaN surface is improved by 30.4 % compared with that of conventional LED with an injection current of 20 mA. Meanwhile, current-voltage curve shows that the electrical performance of this sample is similar to that of conventional LED. The improvement of light output power is mainly attributed to the higher light extraction efficiency when nano-roughened p-GaN surface is adopted.

show abstract

“…The fabrication details can be found in our previous paper. [6] After the deposition of SiNx film, a Ag layer was deposited by magnetron sputtering onto it, where the sputtering time was �60 s. For the formation of Ag NPs, a rapid thermal annealing of �60 s in argon at 500°C was carried out. A top ITO electrode and a rear AI metal contact were deposited afterward for the measurement of current-voltage (1-V) curves and EL spectra.…”

Section: Introductionmentioning

confidence: 99%

“…[I-3] Although enormous efforts have been made on the improvement of its EL efficiency, [4][5][6] the turn-on voltage (usually >5 V) is still too high to meet the demands of Si-based optical interconnection. [4][5][6] Localized surface plasmons (LSPs, the collective oscillation of excited free electrons confined to metal NPs) as a novel approach for the improvement of luminescent performance of active matrix has received a lot of attentions in these years.…”

Section: Introductionmentioning

confidence: 99%

“…[4][5][6] Localized surface plasmons (LSPs, the collective oscillation of excited free electrons confined to metal NPs) as a novel approach for the improvement of luminescent performance of active matrix has received a lot of attentions in these years. [5,6] However, there were still few researches on the improvement of carrier transport of SiNx-based LED by the addition of metal NPs as well as the relationship between this improvement and the evolution of its EL .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The improvement effect of carrier injection by Ag nanoparticles on the electroluminescence of SiN<inf>x</inf>-based LEDs

Wang

Ren

et al. 2012

The 9th International Conference on Group IV Photonics (GFP)

Self Cite

View full text Add to dashboard Cite

The injection of carriers for SiNx-based light-emitting devices (LEDs) is improved by the addition of silver nanoparticels (Ag NPs) onto the luminescence matrix. The threshold voltage of the device and the turn-on voltage for thermal emission of carriers are decreased. No visible electroluminescence (EL) from SiNx-based LEDs can be detected under the Poole-Frenkel transport of carriers. This EL can be resolved when the transport of carriers along their corresponding band tails is dominated under a higher voltage. The turn-on voltage of EL is decreased significantly by the addition of Ag NPs due to this improved carr ier injections.Introduction:

show abstract

Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film

Cited by 24 publications

References 20 publications

On-chip light sources for silicon photonics

On-chip light sources for silicon photonics

Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

The improvement effect of carrier injection by Ag nanoparticles on the electroluminescence of SiN<inf>x</inf>-based LEDs

Contact Info

Product

Resources

About