Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications

High‐frequency noise modeling of GAN HEMT with double recessed barrier layer

“…The distance from the gate to the depletion layer of DRBL HEMT is increased due to the depletion region is promoted to spread in the vertical direction, thus the gate‐source capacitance and gate‐drain capacitance are reduced 10 . Moreover, for the RBL HEMT working in the saturation region, the high‐electric field in the gated region of the channel can accelerate the electrons within a very short distance, which is able to form stable domains by reducing and fixing the length of “dead zone” of transit region 9,15 . The reduction of the gate‐source capacitance, gate‐drain capacitance and the length of dead zone are beneficial for the improvement of noise performance.…”

“…The effect of the depth on (A) I ds -V gs characterization (bias at V ds = 5 V); (B) F min (bias at V ds = 5 V, V gs = À2 V); (C) Noise conductance (bias at V ds = 5 V, V gs = À2 V); D, F min (bias at V ds = 5 V, V gs = À2 V and frequency = 30 GHz); (E) Noise conductance (bias at V ds = 5 V, V gs = À2 V and frequency = 30 GHz) the length of "dead zone" of transit region. 9,15 The reduction of the gate-source capacitance, gate-drain capacitance and the length of dead zone are beneficial for the improvement of noise performance.…”

“…The physical based model could meet this demand. The DRBL HEMT has been studied in the application of terahertz and high efficiency‐energy devices, 9,10 while the related noise investigation is absent. In this paper, a conventional GaN HEMT model is established and verified by measurement results.…”

Semiconductor Surface State Engineering for THz Nanodevices

“…The nanodevices are one of the most promising alternatives to the development of the THz technology. Recently, the semiconductor nanodevices have been employed for the generation and detection of THz radiation [1][2][3][4][5][6] showing an enormous potential for their application.…”

“…THz radiation generation technology can be roughly classified into two categories: photonic and electronic. Phenomena such as the photo-Dember effect [2], Gunn oscillations [3], quantum cascade lasers [4], and difference-frequency mixing in nonlinear crystals [5] have been used to generate THz through the electronic approach. In these techniques, the semiconductor material has a crucial role, and its properties can be further improved by the use of nanostructures.…”