2020
DOI: 10.1016/j.solener.2020.05.076
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Enhancement of optoelectronic properties via substitutional doping of Cu, in and Ag in SnS nanorods for thin film photovoltaics

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Cited by 16 publications
(7 citation statements)
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“…Hybridization of valence and conduction bands as a result of dopants incorporation also influences the value of energy gap. The estimates of the developed STRA and GA-SVR models have excellent agreement with the measured values [31,104,108]. The deviations observed in the estimates of STRA model as compared with that of GA-SVR model may be attributed to the failure of STRA-based to account for nonlinearity behavior existing between lattice distortion of doped…”
Section: Computation and Comparison Of Thementioning
confidence: 56%
See 1 more Smart Citation
“…Hybridization of valence and conduction bands as a result of dopants incorporation also influences the value of energy gap. The estimates of the developed STRA and GA-SVR models have excellent agreement with the measured values [31,104,108]. The deviations observed in the estimates of STRA model as compared with that of GA-SVR model may be attributed to the failure of STRA-based to account for nonlinearity behavior existing between lattice distortion of doped…”
Section: Computation and Comparison Of Thementioning
confidence: 56%
“…The reason for reduced theoretical photoconversion efficiency can be attributed to short carrier lifetime, band alignment and offset, diffusion length, crystalline lattice defects, presence of other tin sulfide phases [10,25], reduced purity, and fabrication flaws [26,27]. The performance of SnS as a material for absorbing solar energy can be enhanced by doping with Bi [28,29], Ag [30,31], Al [32], Fe [33], Cu [34], Sb [35,36], Ge [37], In [30,31], and Pb [38]. Different techniques have been reportedly employed in synthesizing SnS thin films.…”
Section: Introductionmentioning
confidence: 99%
“…In the O 1s spectrum ( Figure 3 c), a peak at 530.28 eV corresponded to lattice oxygen. In Figure 3 d, two peaks at 368 eV and 374 eV with a splitting energy of 6.0 eV belong to 3d 5/2 and 3d 3/2 of Ag(I) [ 26 , 27 ], respectively. The peak intensity of Ag 3d was enhanced with its doping concentration.…”
Section: Resultsmentioning
confidence: 99%
“…4(B) shows a rise in the reflection peak intensity for the (111) plane with increasing Cu concentration that clearly reveals the successful substitutional Cu atom doping on Sn lattice sites. The atomic radius of Cu (128 pm) is smaller than Sn (140 pm), then for substitutional doping, it should result in a decrease 54 in the lattice parameters of SnS. Furthermore, Fig.…”
Section: Structural Analysismentioning
confidence: 97%