Enhancement of photoluminescence from Tm-doped (Al Ga1−)2O3 films by pulsed laser deposition

Chen, Zewei; Arita, Michiko; Deng, Gaofeng; Saito, Katsuhiko; Tanaka, Tooru; Guo, Qi

doi:10.1016/j.ceramint.2023.06.128

Ceramics International

2023

DOI: 10.1016/j.ceramint.2023.06.128

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Enhancement of photoluminescence from Tm-doped (Al Ga1−)2O3 films by pulsed laser deposition

Zewei Chen

Michiko Arita

Gaofeng Deng

et al.

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2024

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Cited by 3 publications

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Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices

Liu,

Li,

Cheng

et al. 2024

Advanced Optical Materials

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Bandgap engineering in monoclinic gallium oxide (β‐Ga2O3) is a powerful strategy for designing semiconductor optoelectronic devices with specific functionalities. In this work, aluminum doping is utilized to modulate the bandgap of Ga2O3. By growing epitaxial β‐(AlxGa1‐x)2O3 (0≤ x≤ 0.84) films on c‐plane sapphire substrates using RF magnetron sputtering, it allowed to tune the energy bandgap, achieving values as high as 6.10 eV. The increased luminescence intensity is attributed to the recombination between donor and acceptor transitions induced by Al doping, resulting in more defects. Additionally, the luminescent band experienced blueshifts due to the enhanced bandgaps. Moreover, density of functional theory (DFT) simulations confirmed the sensitivity of the bandgap to Al content, distinguishing between Ga‐dominated (x < 0.5) and Al‐dominated (x > 0.5) β‐(AlxGa1‐x)2O3. Notably, the bandgap increased more rapidly in Ga‐dominated structures compared to Al‐dominated ones. The electronic structure analysis revealed a redistribution of Ga d states from valence to conduction bands, attributed to the introduction of numerous Al p states. These combined experimental and detailed electronic structure investigations proved crucial insights for designing the structure and exploring potential applications of β‐(AlxGa1‐x)2O3 in photonic devices.

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Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices

Liu,

Li,

Cheng

et al. 2024

Advanced Optical Materials

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Temperature-dependent photoluminescence of r-GeO2 film deposited on r-plane sapphire by synchrotron radiation excitation

Deng,

Huang,

Chen

et al. 2024

Journal of Luminescence

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Low-temperature photoluminescence characteristic of Tm-doped Ga2O3 films for light emitting diodes application

Chen,

Deng,

Saito

et al. 2024

Optical Materials

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Enhancement of photoluminescence from Tm-doped (Al Ga1−)2O3 films by pulsed laser deposition

Cited by 3 publications

References 26 publications

Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices

Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices

Temperature-dependent photoluminescence of r-GeO2 film deposited on r-plane sapphire by synchrotron radiation excitation

Low-temperature photoluminescence characteristic of Tm-doped Ga2O3 films for light emitting diodes application

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Enhancement of photoluminescence from Tm-doped (Al Ga1−)2O3 films by pulsed laser deposition

Cited by 3 publications

References 26 publications

Structural, Optical, and Electronic Properties of Epitaxial β‐(AlxGa1‐x)2O3 Films for Optoelectronic Devices

Structural, Optical, and Electronic Properties of Epitaxial β‐(AlxGa1‐x)2O3 Films for Optoelectronic Devices

Temperature-dependent photoluminescence of r-GeO2 film deposited on r-plane sapphire by synchrotron radiation excitation

Low-temperature photoluminescence characteristic of Tm-doped Ga2O3 films for light emitting diodes application

Contact Info

Product

Resources

About

Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices

Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices