In this paper, we report the direct growth of ultra-wide bandgap GeO2 film on the m-plane sapphire substrate by pulsed laser deposition. Raman scattering and x-ray diffraction measurements confirm that the obtained GeO2 film has a (001)-oriented rutile structure mixed with the amorphous phase, and the film has an out-of-plane strain of –0.28% along the c direction. Transmittance spectra and x-ray photoelectron spectroscopy measurements determine that the transparent GeO2 film has an ultra-wide bandgap of about 5.1 eV. Room temperature photoluminescence spectrum exhibits a broad blue–green emission band dominated by two peaks at about 2.4 and 2.8 eV. With the temperature decreasing to 21 K, the peak intensities increase exponentially accompanied by a slight blue-shift in the peak position. We believe that these findings will pave the way for applications of the wide-bandgap GeO2 film in power and optoelectronic devices.

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In this work, we report on the demonstration of light-emitting diode (LED) based on Tm, Er, and Eu codoped Ga2O3 thin film. Current-controlled electroluminescence (EL) has been observed from the Ga2O3:(Tm+Er+Eu)-based LED with a relatively low driven voltage of ~9 V. The EL spectra reveal that the observed light emission results from the combination of simultaneous blue, green, and red emissions from Tm3+, Er3+, and Eu3+ ions, respectively. This strategy for LED shows great potential to achieve full color (white light) by intentionally changing the concentrations of Tm3+, Er3+, and Eu3+ ions in Ga2O3 without using any other phosphors.