Low driven voltage green electroluminescent device based on Er:Ga2O3/GaAs heterojunction

Color-Tunable Light-Emitting Diodes Based on Rare Earth Doped Gallium Oxide Films

“…Additionally, it has been observed that the temperature quenching effects exhibit an inverse relationship with the bandgap value of the host material. , Gallium oxide (Ga 2 O 3 ), which exhibits a significantly larger bandgap (4.9 eV) compared to GaN, is expected to be an excellent host material. In this spotlight article, we review the progress made toward achieving color-tunable LEDs based on RE doped Ga 2 O 3 semiconductors. − We have systematically studied the structural and optical characteristics of rare earth (Eu, Er, and Tm) doped Ga 2 O 3 films grown by pulsed laser deposition (PLD) and have demonstrated red, green, and blue LEDs based on these Eu, Er, and Tm doped Ga 2 O 3 films and achieved color-tunable LEDs using Eu, Er, and Tm codoped Ga 2 O 3 films.…”

Oxidation of the n-GaAs Surface: Morphological and Kinetic Analysis

“…The formation of own oxide layers on the GaAs surface can significantly affect the material properties [15]. On the other side, own oxides can act as a passivating film, which prevents the material from breaking down in natural and aggressive environments [16].…”

Current-controlled electroluminescence from light-emitting diodes based on Tm, Er, and Eu codoped Ga2O3 thin films

“…26) Two distinct emissions located at around 529 and 550 nm are caused by the transitions of 2 H 11/2 → 4 I 15/2 and 4 S 3/2 → 4 I 15/2 in Er 3+ ions, respectively. 27) Furthermore, another four remarkable emissions at about 595, 615, 657, and 712 nm correspond to Eu 3+ -associated emissions, induced by the transitions of 5 D 0 → 7 F 1 , 5 D 0 → 7 F 2 , 5 D 0 → 7 F 3 , and 5 D 0 → 7 F 4 , respectively. 29) These simultaneously detected Tm 3+ -, Er 3+ -, and Eu 3+ -related light emissions are demonstrated to be triggered by the transfer of the energy released from the defect-assisted indirect recombination in Ga 2 O 3 to the codoped Tm 3+ , Er 3+ , and Eu 3+ ions, respectively.…”

“…Previously, we have observed pure blue, green, and red EL from LEDs based on Tm 3+ , Er 3+ , and Eu 3+ singly doped Ga 2 O 3 thin films, respectively. [26][27][28] In this work, bright and uniform pink light is emitted from the Ga 2 O 3 :(Tm+Er+Eu)-based LED, which is supposed to be a consequence of the color mixing of blue, green and red lights induced by the codoped Tm 3+ , Er 3+ , and Eu 3+ ions in the film.…”

“…In Fig. 4, we also depict the CIE coordinates of blue, green, and red lights from LEDs based on Ga 2 O 3 :Tm, 26) Ga 2 O 3 :Er, 27) and Ga 2 O 3 :Eu, 28) respectively. The solid triangle formed by connecting these three points demonstrates the capability of light emissions from the LEDs based on Tm 3+ , Er 3+ , and Eu 3+ codoped Ga 2 O 3 thin films.…”