Enhancement of Piezoelectric Response in Yttrium Aluminum Nitride (Y_xAl_1‐xN) Thin Films

Abstract

Alloying rare earth elements into aluminum nitride (AlN) thin films to increase the piezoelectric response has gained a lot of attention in the past few years. Many rare earth elements were investigated in which scandium alloying has resulted in the highest piezoelectric response for AlN. At the same time, researchers have also theoretically explored yttrium alloying as a feasible and economical alternative to scandium. In this paper, we demonstrate for the first time experimentally the increase of the piezoelectric response of sputter‐deposited YxAl1–xN thin films as a function of increasing yttrium concentration as predicted by density functional theory calculations. By using differently manufactured targets, YxAl1–xN thin films with four different yttrium alloying concentrations (9, 12, 15 and 20 at%.) are synthesized. Detailed thin film analysis is carried out and the highest value of d 33 measured is 12 pC/N for Y0.2Al0.8N, which is a 250 % increase compared to pure AlN. Even more, the Young’s modulus decreases with increasing yttrium concentration in excellent agreement with theoretical predictions. Finally, Y0.15Al0.85N and Y0.2Al0.8N layers show high crystalline stability in pure oxygen environment up to 800˚C, demonstrating high oxidation resistance even under harsh environmental conditions.This article is protected by copyright. All rights reserved.

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

“…Figure 4b shows the relationship between the d 33 and the full width at half maximum (FWHM) of synthesized Y 0.09 Al 0.91 N samples, which implies that a low FWHM is a necessary but not sufficient condition for obtaining a high d 33 . A recent work determined that the Y 0.2 Al 0.8 N presented a d 33 of 12 pC/N [116]. Besides the scarce and expensive rare-earth element, other earthabundant transitional metals (TMs) were also adopted.…”