Enhancement of piezoelectric response in Ga doped BiFeO3 epitaxial thin films

Jaber, Nazir; Wolfman, J.; Daumont, Christophe; Négulescu, B.; Ruyter, A.; Feuillard, G.; Bavencoffe, Maxime; Fortineau, Jérôme; Sauvage, Thierry; Courtois, Blandine; Bouyanfif, H.; Longuet, Jean-Louis; Autret-Lambert, Cécile; Gervais, F.

doi:10.1063/1.4923217

Cited by 14 publications

(13 citation statements)

References 43 publications

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“…The increased effective field (observed as a hysteresis loop imprint in Figure ) could be responsible for the observed piezoresponse enhancement and the decrease results from the decreased crystallinity at higher ion doses or from probable significant changes in stoichiometry . This is also consistent with results on Ga doping in BiFeO3 thin films …”

Section: Resultssupporting

confidence: 86%

Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films

McGilly

Sandu

Feigl

et al. 2017

Adv Funct Materials

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Defect engineering is one of the cornerstones of the modern electronics industry. Almost all electronic devices include materials that have been doped by ion bombardment. For materials where crystallinity is essential, such as ferroelectrics, defect type and concentration can vastly influence properties and are often used to optimize device performance. This study shows a method to effectively control the density and position on the nanoscale of defect sites in thin films of Pb(Zr,Ti)O3 via focused ion beam microscopy. This allows for exceptional clarity of observation of the role of defects in nucleation, polarization switching, and domain wall interaction through investigation with piezoresponse force microscopy and transmission electron microscopy, adding insight to accepted but seldom‐demonstrated facts on defect‐induced effects. This nanoscale defect engineering can be used as a tool to control material properties, and furthermore, a route is demonstrated toward a practical application.

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Section: Resultssupporting

confidence: 86%

Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films

McGilly

Sandu

Feigl

et al. 2017

Adv Funct Materials

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“…A comparison of the resulting acceptor and donor states provides insight into the performance of such dopants and, together with defect formation energies, enables ranking all candidates and identification of optimal dopants. K Ca +2 [8-11] Sc +3 [12, 13] Ti +4 [14-17] V +5 [17, 18] Cr +3 [19-22] +2-4Mn [22][23][24][25][26][27][28][29] Fe +3 Co +3 [30,31] Ni +3 [32,33] +2-3Cu [17,32] Zn +2 [16,17] Ga +3 [34,35] Ge Rb Sr +2 [9,10] Y +3 [36,37]…”

mentioning

confidence: 99%

Doping of BiFeO3 : A comprehensive study on substitutional doping

Gebhardt¹,

Rappe²

2018

Phys. Rev. B

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We investigate the effects of metal dopants on BiFeO3 (BFO) by first-principles calculations. Substitutional doping in oxide materials is often complicated by the formation of defects that interfere with, dominate, or otherwise change the effects of the introduced dopant. As a result, extracting correct conclusions and working principles experimentally requires extensive characterization of the material properties, which is not easily accessible. We solve this problem by an extensive model study of the changes that are introduced in the crystal, electronic, and magnetic structure of BFO, focusing on substitutional doping in an otherwise ideal crystal. We examine a large number of candidate elements. From our results, trends can be established within rows and groups of the periodic table. We predict the preferred doping site (Bi or Fe substitution) and oxidation state for each dopant and provide an in-depth understanding of the structural and electronic changes that are introduced upon doping. From this, we are able to divide the periodic table into direct p-dopants, n-dopants, and isovalent cases. For the latter, understanding the valence configuration and the band structure of the doped systems enables to distinguish between isovalent dopants that can enable p-type, n-type, or no doping. A comparison of the resulting acceptor and donor states provides insight into the performance of such dopants and, together with defect formation energies, enables ranking all candidates and identification of optimal dopants. K Ca +2 [8-11] Sc +3 [12, 13] Ti +4 [14-17] V +5 [17, 18] Cr +3 [19-22] +2-4Mn [22][23][24][25][26][27][28][29] Fe +3 Co +3 [30,31] Ni +3 [32,33] +2-3Cu [17,32] Zn +2 [16,17] Ga +3 [34,35] Ge Rb Sr +2 [9,10] Y +3 [36,37]

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“…X-ray Reciprocal Space Mapping (RSM) around the (103) pc reflection have shown that BGFO and LSMO are epitaxial on STO (not shown here, see [19]). The lattice parameters evolutions confirm that Ga effectively enters into the BFO structure.…”

Section: Combinatorial Pulsed Laser Depositionmentioning

confidence: 90%

“…As x increases from 6-12%, Fe content goes back to about 1.0 while Bi content continue to decrease. [19] From these values, one could suspect that Ga is substituted partly for Bi and partly for Fe.…”

Section: Combinatorial Pulsed Laser Depositionmentioning

confidence: 99%

“…This indicates a change of symmetry of the film and might be the signature of a MPB. Piezoelectric characterizations were made on 30 x 30 μm 2 top Pt electrodes (dc-sputter deposited via a lift-off process) using a laser scanning vibrometer (LSV model MSA-500, Polytec, V AC = 1 V) (see schematic of the heterostructure Figure 3b [19] To confirm the presence of a MPB we looked for a change in the ferroelectric properties of BGFO with Ga content x. We used a ferroelectric tester (Radiant LC II) to measure polarization hysteresis P(E).…”

Section: Combinatorial Pulsed Laser Depositionmentioning

confidence: 99%

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Interface Combinatorial Pulsed Laser Deposition to Enhance Heterostructures Functional Properties

Wolfman¹,

Négulescu²,

Ruyter³

et al. 2021

Practical Applications of Laser Ablation

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In this chapter we will describe a new development of combinatorial pulsed laser deposition (CPLD) which targets the exploration of interface libraries. The idea is to modulate continuously the composition of interfaces on a few atomic layers in order to alter their functional properties. This unique combinatorial synthesis of interfaces is possible due to very specific PLD characteristics. The first one is its well-known ability for complex oxide stoichiometry transfer from the target to the film. The second one is the layer by layer control of thin film growth at the atomic level using in-situ RHEED characterization. The third one relates to the directionality of the ablated plume which allows for selective area deposition on the substrate using a mobile shadow-mask. However PLD also has some limitations and important PLD aspects to be considered for reliable CPLD are reviewed. Multiple examples regarding the control of interface magnetism in magnetic tunnel junctions and energy band and Schottky barrier height tuning in ferroelectric tunable capacitors are presented.

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Enhancement of piezoelectric response in Ga doped BiFeO3 epitaxial thin films

Cited by 14 publications

References 43 publications

Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films

Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films

Doping of BiFeO3 : A comprehensive study on substitutional doping

Interface Combinatorial Pulsed Laser Deposition to Enhance Heterostructures Functional Properties

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