Enhancement of spin–orbit torque via interfacial hydrogen and oxygen ion manipulation

Peng, Wenlin; Zhang, J. Y.; Feng, Guonan; Xu, Xiaoming; Yang, Chen; Jia, Y. L.; Yu, Guo

doi:10.1063/1.5110206

Cited by 16 publications

(6 citation statements)

References 47 publications

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“…Full magnetization switching can be clearly observed under assisted H X when t Ti = 0. The reversal of the switching polarity takes place when the H X direction is changed from the +X to −X axis, consistent with the previous study . Generally, deterministic magnetization switching under the absence of H X is the most attractive for practical applications of the SOT-based device.…”

Section: Resultssupporting

confidence: 89%

“…The reversal of the switching polarity takes place when the H X direction is changed from the +X to −X axis, consistent with the previous study. 51 Generally, deterministic magnetization switching under the absence of H X is the most attractive for practical applications of the SOT-based device. Figure 1e presents fieldfree SOT-driven magnetization switching loops for samples with various t Ti .…”

Section: ■ Experimental Methodsmentioning

confidence: 99%

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Controllable Spin–Orbit Torque Induced by Interfacial Ion Absorption in Ta/CoFeB/MgO Multilayers with Canted Magnetizations

Zhang,

Zhao,

Dou

et al. 2023

ACS Appl. Mater. Interfaces

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Electrically generated spin–orbit torque (SOT) has emerged as a powerful pathway to control magnetization for spintronic applications including memory, logic, and neurocomputing. However, the requirement of external magnetic fields, together with the ultrahigh current density, is the main obstacle for practical SOT devices. In this paper, we report that the field-free SOT-driven magnetization switching can be successfully realized by interfacial ion absorption in perpendicular Ta/CoFeB/MgO multilayers. Besides, the tunable SOT efficiency exhibits a strong dependence on interfacial Ti insertion thicknesses. Polarized neutron reflection measurements demonstrate the existence of canted magnetization with Ti inserted, which leads to deterministic magnetization switching. In addition, interfacial characterization and first-principles calculations reveal that B absorption by the Ti layer is the main cause behind the enhanced interfacial transparency, which determines the tunable SOT efficiency. Our findings highlight an attractive scheme to a purely electric control spin configuration, enabling innovative designs for SOT-based spintronics via interfacial engineering.

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Section: Resultssupporting

confidence: 89%

Section: ■ Experimental Methodsmentioning

confidence: 99%

Controllable Spin–Orbit Torque Induced by Interfacial Ion Absorption in Ta/CoFeB/MgO Multilayers with Canted Magnetizations

Zhang,

Zhao,

Dou

et al. 2023

ACS Appl. Mater. Interfaces

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“…By annealing at the proper temperature, the ratio of λ FL /λ DL can be greatly enhanced due to the improvement of interfacial spin transparency [55]. The λ FL /λ DL ratio can also be adjusted appropriately by partial oxidation or hydrogenation at the ferromagnetic and SOC layer interfaces [56,57]. Moreover, the Ostered field produced by the current also has a certain enhancement effect on FL torque, which can help to improve the ratio moderately [41].…”

Section: Proposed Device Structure and Parameters Optimizationmentioning

confidence: 99%

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

et al. 2022

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Two-dimensional van der Waals (2D vdW) ferromagnets possess outstanding scalability, controllable ferromagnetism, and out-of-plane anisotropy, enabling the compact spintronics-based non-volatile in-memory computing (nv-IMC) that promises to tackle the memory wall bottleneck issue. Here, by employing the intriguing room-temperature ferromagnetic characteristics of emerging 2D Fe3GeTe2 with the dissimilar electronic structure of the two spin-conducting channels, we report on a new type of non-volatile spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device based on Fe3GeTe2/MgO/Fe3GeTe2 heterostructure, which demonstrates the uni-polar and high-speed field-free magnetization switching by adjusting the ratio of field-like torque to damping-like torque coefficient in the free layer. Compared to the conventional 2T1M structure, the developed 3-transistor-2-MTJ (3T2M) cell is implemented with the complementary data storage feature and the enhanced sensing margin of 201.4% (from 271.7 mV to 547.2 mV) and 276% (from 188.2 mV to 520 mV) for reading “1” and “0”, respectively. Moreover, superior to the traditional CoFeB-based MTJ memory cell counterpart, the 3T2M crossbar array architecture can be executed for AND/NAND, OR/NOR Boolean logic operation with a fast latency of 24 ps and ultra-low power consumption of 2.47 fJ/bit. Such device to architecture design with elaborated micro-magnetic and circuit-level simulation results shows great potential for realizing high-performance 2D material-based compact SOT magnetic random-access memory, facilitating new applications of highly reliable and energy-efficient nv-IMC.

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“…[20,25] Numerous efforts have been exerted to manipulate the chargeto-spin/orbital current conversion efficiency and the SOT generation efficiency by changing the concentration of oxygen ions in oxidized light metal layers. [26][27][28] However, such a strategy is usually not feasible once the thin films or devices are fabricated, and the manipulation becomes irreversible. The electric field can directly tune the carrier density or change the strain state via a piezoelectric crystal, which can reversibly change the SOT efficiency in heavy metals.…”

Section: Introductionmentioning

confidence: 99%

Electrical Manipulation of Orbital Current Via Oxygen Migration in Ni₈₁Fe₁₉/CuO_x/TaN Heterostructure

Cui

Zhang

et al. 2023

Advanced Materials

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The orbital Hall effect and the interfacial Rashba effect provide new approaches to generate orbital current and spin-orbit torque (SOT) efficiently without the use of heavy metals. However, achieving efficient dynamic control of orbital current and SOT in light metal oxides has proven challenging. In this study, it is demonstrated that a sizable magnetoresistance effect related to orbital current and SOT can be observed in Ni 81 Fe 19 /CuO x /TaN heterostructures with various CuO x oxidization concentrations. The ionic liquid gating induces the migration of oxygen ions, which modulates the oxygen concentration at the Ni 81 Fe 19 /CuO x interface, leading to reversible manipulation of the magnetoresistance effect and SOT. The existence of a thick TaN capping layer allows for sophisticated internal oxygen ion reconstruction in the CuO x layer, rather than conventional external ion exchange. These results provide a method for the reversible and dynamic manipulation of the orbital current and SOT generation efficiency, thereby advancing the development of spin-orbitronic devices through ionic engineering.

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Enhancement of spin–orbit torque via interfacial hydrogen and oxygen ion manipulation

Cited by 16 publications

References 47 publications

Controllable Spin–Orbit Torque Induced by Interfacial Ion Absorption in Ta/CoFeB/MgO Multilayers with Canted Magnetizations

Controllable Spin–Orbit Torque Induced by Interfacial Ion Absorption in Ta/CoFeB/MgO Multilayers with Canted Magnetizations

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Electrical Manipulation of Orbital Current Via Oxygen Migration in Ni₈₁Fe₁₉/CuO_x/TaN Heterostructure

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Enhancement of spin–orbit torque via interfacial hydrogen and oxygen ion manipulation

Cited by 16 publications

References 47 publications

Controllable Spin–Orbit Torque Induced by Interfacial Ion Absorption in Ta/CoFeB/MgO Multilayers with Canted Magnetizations

Controllable Spin–Orbit Torque Induced by Interfacial Ion Absorption in Ta/CoFeB/MgO Multilayers with Canted Magnetizations

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Electrical Manipulation of Orbital Current Via Oxygen Migration in Ni81Fe19/CuOx/TaN Heterostructure

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Electrical Manipulation of Orbital Current Via Oxygen Migration in Ni₈₁Fe₁₉/CuO_x/TaN Heterostructure