Enhancement of Spin Polarization in a Transition Metal Oxide Ferromagnetic Nanodot Diode

Abstract

Enhancement of spin polarization was observed in a transition metal oxide (Fe,Zn)(3)O(4)/Nb-SrTiO(3) ferromagnetic nanodot Schottky diode. The highly integrated oxide nanodot diodes were constructed using nanoimprint lithography based on a Mo lift-off method in combination with a pulsed laser deposition technique. The junction magnetoresistance of diodes increased as diode size increased. The spin polarization estimated from the thermionic emission model is enhanced from P = 0.74 in a conventional film to P = 0.89 in a nanodot diode whose size is 300 × 300 nm(2). The nanofabrication technique used here will enable us to construct superior transition metal oxide spintronic nanomaterial and nanodevices.

Pyroelectric detection of spontaneous polarization in magnetite thin films

“…close to 4.05 μ B and a high Curie temperature of 860 K. [1][2][3] The magnetic properties of magnetite make it a useful material for spintronic applications, such as tunnel junctions 4,5 and spin-injection devices. 6,7 Another unique feature of Fe 3 O 4 is the well-known metal-insulator Verwey transition at 120 K. 8 At room temperature, magnetite is metallic, since electrons can hop within the B-site lattice between the Fe 2+ and Fe 3+ ions. In contrast, the charges of Fe 2+ and Fe 3+ ions become ordered below 120 K and Fe 3 O 4 crystals become insulating.…”

Chemical synthesis of oriented ferromagnetic LaSr-2 × 4 manganese oxide molecular sieve nanowires

“…1,2 Nanoscale complex oxides display different magnetic, electrical, optical and mechanical properties compared to their bulk counterparts. Recently, investigations concerning their nanoscale characteristics, in particular one dimensional (1D) magnetic nanostructures, have received a great deal of attention for the development of future technologies like magnetic memories 3 or new types of sensors and logic devices based on magnetic oxides. [4][5][6][7] Planar nanowires (NWs) have been investigated because of their potential use in domain-wall devices proposed for data storage 8 and logic applications.…”

Effect of Zn substitution in (111)-textured ZnxFe3−xO4 thin films on magnetization dynamics

“…Zn x Fe 3x O 4 as a tunable ferromagnetic semiconductor has received considerable attention due to its strong electron correlation and high Curie temperature [1][2][3]. More desirably, low concentration of Zn substitution is an effective method for tuning the electronic and magnetic properties of Fe 3 O 4 over a wide range without changing the half metallic properties [4,5]. These merits make Zn x Fe 3x O 4 system a promising functional material for spintronic devices such as spin-polarized current injection and tunneling magnetoresistance [6,7].…”

“…Dynamic magnetic parameters including magnetic anisotropy, splitting factor g, and Gilbert damping have been obtained, which are significant for oxide spintronic devices designs and applications. 4…”