Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates

Sawano, Kentarou; Hirose, Yoshiaki; Ozawa, Yusuke; Koh, Shinji; Yamanaka, Junji; Nakagawa, Kiyokazu; Hattori, Takeo; Shiraki, Y.

doi:10.1143/jjap.42.l735

Cited by 32 publications

(30 citation statements)

References 18 publications

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“…These results show that the Ge concentration is approximately 20%. We evaluated the strain relaxation ratio from the shift of Si -Si vibration mode of Raman scattering spectroscopy by the same method we did in our previous work [15]. The ratio of the specimen in this work was evaluated to be 65%.…”

Section: Resultsmentioning

confidence: 99%

Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate

Yamanaka

Sawano²,

Suzuki

et al. 2006

Thin Solid Films

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Section: Resultsmentioning

confidence: 99%

Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate

Yamanaka

Sawano²,

Suzuki

et al. 2006

Thin Solid Films

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“…1 Several methods use ion implantation as a mean to generate strain relaxation of SiGe layers. [2][3][4][5][6] As different strain types (tensile, compressive, biaxial, or uniaxial) modify in a specific way the material properties, i.e., carrier mobility, 7,8 dopant diffusion, 9 or dopant solubility, 10,11 the study of dislocation formation and control in Si(Ge) materials regained importance.…”

Section: Introductionmentioning

confidence: 99%

Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures

Trinkaus

Buca

Minamisawa

et al. 2012

Journal of Applied Physics

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Plastic strain relaxation of SiGe layers of different crystal orientations is analytically analyzed and compared with experimental results. First, strain relaxation induced by ion implantation and annealing, considering dislocation loop punching and loop interactions with interfaces/surfaces is discussed. A flexible curved dislocation model is used to determine the relation of critical layer thickness with strain/stress. Specific critical conditions to be fulfilled, at both the start and end of the relaxation, are discussed by introducing a quality parameter for efficient strain relaxation, defined as the ratio of real to ideal critical thickness versus strain/stress. The anisotropy of the resolved shear stress is discussed for (001) and (011) crystal orientations in comparison with the experimentally observed anisotropy of strain relaxation for Si/SiGe heterostructures.

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“…In this study, as a novel strain controlling technique we propose selective ion-implantation technique, which is able to provide benefits of both local and global strains. So far, the SiGe buffer layer fabrication method utilizing ion implantation has been developed by several groups [2][3][4][5][6][7] and it has been demonstrated that ion-implantation-induced defects acting as dislocation sources are able to markedly enhance a degree of strain-relaxation of thin SiGe layers. Here, we applied this technique to local controlling of strain by means of introducing the defects selectively.…”

Section: Introductionmentioning

confidence: 99%