Enhancement of the Device Performance and the Stability with a Homojunction-structured Tungsten Indium Zinc Oxide Thin Film Transistor

Park, Hyun Woo; Song, Aeran; Choi, Dukhyun; Kim, Hyung Jun; Kwon, Jang Yeon; Chung, Kwun Bum

doi:10.1038/s41598-017-12114-y

Cited by 26 publications

(11 citation statements)

References 29 publications

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“…These methods can lead to the higher output performance of TENGs, but are still limited in real applications due to the complexity, high-cost, and lack of both physical characteristic and analysis properties for understanding embedded NP behaviors inside the tribo-polymers layer. Moreover, oxygen vacancies in the oxide nanoparticles are electrically positive charges [ 9 ], which is an important factor that can contribute to the exchange and trapping of electrons when driving a TENG. In previous studies, however, the effect of oxygen vacancies within the tribo-material surface according to the oxide nanoparticle embedded ratio was not studied.…”

Section: Introductionmentioning

confidence: 99%

Effects of Embedded TiO2−x Nanoparticles on Triboelectric Nanogenerator Performance

et al. 2018

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Triboelectric nanogenerators (TENGs) are used as self-power sources for various types of devices by converting external waves, wind, or other mechanical energies into electric power. However, obtaining a high-output performance is still of major concern for many applications. In this study, to enhance the output performance of polydimethylsiloxane (PDMS)-based TENGs, highly dielectric TiO2−x nanoparticles (NPs) were embedded as a function of weight ratio. TiO2−x NPs embedded in PDMS at 5% showed the highest output voltage and current. The improved output performance at 5% is strongly related to the change of oxygen vacancies on the PDMS surface, as well as the increased dielectric constant. Specifically, oxygen vacancies in the oxide nanoparticles are electrically positive charges, which is an important factor that can contribute to the exchange and trapping of electrons when driving a TENG. However, in TiO2−x NPs containing over 5%, the output performance was significantly degraded because of the increased leakage characteristics of the PDMS layer due to TiO2−x NPs aggregation, which formed an electron path.

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Section: Introductionmentioning

confidence: 99%

Effects of Embedded TiO2−x Nanoparticles on Triboelectric Nanogenerator Performance

et al. 2018

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“…The valence band energies of the metal oxides were obtained by UPS and the conduction band energies were obtained by adding the reported optical bandgap of each material to their valence band energies ( Figure S1, Supporting Information) [62]. According to a previously reported transistor, WIZO mobility and energy levels are 19.57 cm 2 /Vs and 3.4 Ev [44]. The Schottky barrier of ITO and PC 61 BM is 0.8 eV when metal oxides are not used.…”

Section: Resultsmentioning

confidence: 99%

“…Notably, the element W in WIZO thin films can be used to control the electronic structure, including the band alignment, oxygen-deficient bonding states, and band edge states below the conduction band. In addition, the W doping concentration in WIZO thin films may affect the electronic structure and can be used to control the device performance and stability characteristics [44]. Although W-based oxide films have yielded PCEs of up to 13%, they have received considerably less attention than other oxides such as Zn, Sn, In and Ni [28,41,44].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, the W doping concentration in WIZO thin films may affect the electronic structure and can be used to control the device performance and stability characteristics [44]. Although W-based oxide films have yielded PCEs of up to 13%, they have received considerably less attention than other oxides such as Zn, Sn, In and Ni [28,41,44]. In this work, we report the fabrication of high-efficiency PSCs based on the architecture: ITO/metal oxide/PC 61 BM/CH 3 NH 3 PbI 3 /Spiro-OMeTAD/MoO 3 /Ag.…”

Section: Introductionmentioning

confidence: 99%

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Tungsten-Doped Zinc Oxide and Indium–Zinc Oxide Films as High-Performance Electron-Transport Layers in N–I–P Perovskite Solar Cells

et al. 2020

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Perovskite solar cells (PSCs) have attracted tremendous research attention due to their potential as a next-generation photovoltaic cell. Transition metal oxides in N–I–P structures have been widely used as electron-transporting materials but the need for a high-temperature sintering step is incompatible with flexible substrate materials and perovskite materials which cannot withstand elevated temperatures. In this work, novel metal oxides prepared by sputtering deposition were investigated as electron-transport layers in planar PSCs with the N–I–P structure. The incorporation of tungsten in the oxide layer led to a power conversion efficiency (PCE) increase from 8.23% to 16.05% due to the enhanced electron transfer and reduced back-recombination. Scanning electron microscope (SEM) images reveal that relatively large grain sizes in the perovskite phase with small grain boundaries were formed when the perovskite was deposited on tungsten-doped films. This study demonstrates that novel metal oxides can be used as in perovskite devices as electron transfer layers to improve the efficiency.

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“…Density and roughness of films fabricated were obtained by fitting the interference fringe of X-ray using EMPYREAN in Figure 2 [21]. No significant difference was found in the density of all samples (4.81-4.92g/cm 3 ).…”

Section: Methodsmentioning

confidence: 99%

Effective Evaluation Strategy Toward Low Temperature Solution-Processed Oxide Dielectrics for TFT Device

Cai

Peng

Ning

et al. 2019

IEEE J. Electron Devices Soc.

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Solution-processed oxide dielectrics are widely studied as alternatives to SiO 2 , SiN x in thin film transistors for high capacitance and low energy consuming. However, it's still a challenge to achieve high quality of solution-processed oxide dielectrics TFT by low-temperature post-treatment. Here, an effective strategy is proposed to evaluate low temperature solution-processed ZrO 2 TFT in terms of uniformity, film density and electrical performance by employing TG/DSC, drop analyzer, XRR and a novel µ-PCD measurement. Particularly, µ-PCD measurement provides valuable information on homogeneity and defect level. The optimized device with ZrNO 3 as dielectric precursor and ethyl alcohol as solvent through spin coating process annealed at 200 • C shows a saturation mobility of 8.6 cm 2 V −1 S −1 , I on /I off ratio about 1.1×10 6 , subthreshold swing about 334 mV/decade with a low leakage current density of 5×10 −5 A/cm 2 at 10V. This article offers a convenient way for precursor optimization towards low leakage current and high homogeneity solution-processed oxide dielectrics for TFT devices.

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Enhancement of the Device Performance and the Stability with a Homojunction-structured Tungsten Indium Zinc Oxide Thin Film Transistor

Cited by 26 publications

References 29 publications

Effects of Embedded TiO2−x Nanoparticles on Triboelectric Nanogenerator Performance

Effects of Embedded TiO2−x Nanoparticles on Triboelectric Nanogenerator Performance

Tungsten-Doped Zinc Oxide and Indium–Zinc Oxide Films as High-Performance Electron-Transport Layers in N–I–P Perovskite Solar Cells

Effective Evaluation Strategy Toward Low Temperature Solution-Processed Oxide Dielectrics for TFT Device

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