2006
DOI: 10.1143/jpsj.75.044401
|View full text |Cite
|
Sign up to set email alerts
|

Enhancement of the Electron–Hole BCS Order by Energy Band Anisotropy in Highly Photoexcited Semiconductors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2018
2018
2018
2018

Publication Types

Select...
1
1

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(2 citation statements)
references
References 24 publications
0
2
0
Order By: Relevance
“…The significant feature of excitonic insulating state is still lacking in the present study probably because of the insufficient temperature i.e. the predicted critical temperature is typically lower than 1K [10][11] and the larger probe energy i.e. the probe wavelength is better to match the band gap energy.…”
Section: Discussionmentioning
confidence: 78%
See 1 more Smart Citation
“…The significant feature of excitonic insulating state is still lacking in the present study probably because of the insufficient temperature i.e. the predicted critical temperature is typically lower than 1K [10][11] and the larger probe energy i.e. the probe wavelength is better to match the band gap energy.…”
Section: Discussionmentioning
confidence: 78%
“…Recently, it is theoretically suggested that e-h BCS order can be enhanced when the effective masses of electrons and holes have a strong anisotropy [10][11]. Besides, the photo-induced superconductivity has also been predicted in a laser-driven two-band semiconductor [12].…”
Section: Introductionmentioning
confidence: 99%