Enhancement of the luminescence by the controlled growth of silicon nanocrystals in SRO/SiO 2 superlattices

Coyopol, A.; Cabañas-Tay, S.A.; Díaz-Becerril, T.; Garcı́a-Salgado, G.; Palacios-Huerta, L.; Morales-Morales, F.; Morales-Sánchez, A.

doi:10.1016/j.spmi.2017.10.009

Cited by 3 publications

(9 citation statements)

References 17 publications

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“…The formation of Si-NCs in SRO monolayers and SRO/SiO 2 multilayers was demonstrated by HRTEM analysis [25,28]. A reduction in nanocrystal size in SRO/SiO 2 MLs respect to SRO Si-NC size is about 1.68 ± 0.2 nm, as reported in other work [25].…”

Section: Si-ncs In Sro Monolayer and Sro/sio 2 Mlssupporting

confidence: 70%

“…This study evidences crystallization of silicon clusters after annealing and formation of Si-NCs in the SRO-SiO 2 interfaces and the SRO nanolayers by Si atoms diffusion. This effect was demonstrated before by HRTEM measurements [25,28].…”

Section: Sro/sio 2 Mlssupporting

confidence: 67%

“…Both, monolayers and multilayers, emit an intense and broad emission band in the red-orange region (1.45-2.1 eV). Figure 9b and a, shows, respectively, the PL spectra of thermally annealed SRO monolayers and SRO/SiO 2 MLs with a SROthickness of 5 nm with different Si-excesses [28]. In this case it was found that the MLs with a thickness of 5 nm in the SRO layer, has a maximum of PL emission independent of the Si-excess.…”

Section: Sro/sio 2 Mlsmentioning

confidence: 78%

“…Such effect means that temperatures above 1000°C are sufficient for Si-SiO x phase separation and Si-NCs formation in the SRO monolayers. It is worth mentioning that an annealing temperature of 1100°C by 2 h provided better results in the structural and optical properties [25,28]. 7.5 nm (sample 3C), before and after thermal annealing (1100°C).…”

Section: Sro Monolayermentioning

confidence: 96%

“…Such analysis to determine the MLs with greater emission as function of Si-excess and SRO-thickness layer. The ratio of emission intensities was calculated taking the maximum PL intensity of each peak (~1.72, ~1.6 and ~1.52 eV) that form the PL spectrum of each SRO/SiO 2 ML (I PL ML) divided by the maximum PL intensity of SRO monolayers (I PL Mono) located at the same energy [28]. So, the most intense photoluminescence is achieved using SRO layers with 5 nm thick and 14 at.% of Si-excess.…”

Section: Sro/sio 2 Mlsmentioning

confidence: 99%

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Synthesis and Luminescent Properties of Silicon Nanocrystals

Coyopol-Solís¹,

Díaz-Becerril²,

Garcı́a-Salgado³

et al. 2018

Nanocrystals and Nanostructures

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Nowadays, study of silicon-based visible light-emitting devices has increased due to large-scale microelectronic integration. Since then different physical and chemical processes have been performed to convert bulk silicon (Si) into a light-emitting material. From discovery of Photoluminescence (PL) in porous Silicon by Canham, a new field of research was opened in optical properties of the Si nanocrystals (Si-NCs) embedded in a dielectric matrix, such as SRO (silicon-rich oxide) and SRN (silicon-rich nitride). In this respect, SRO films obtained by sputtering technique have proved to be an option for light-emitting capacitors (LECs). For the synthesis of SRO films, growth parameters should be considered; Si-excess, growth temperature and annealing temperature. Such parameters affect generation of radiative defects, distribution of Si-NCs and luminescent properties. In this chapter, we report synthesis, structural and luminescent properties of SRO monolayers and SRO/SiO 2 multilayers (MLs) obtained by sputtering technique modifying Si-excess, thickness and thermal treatments.

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Section: Si-ncs In Sro Monolayer and Sro/sio 2 Mlssupporting

confidence: 70%

Section: Sro/sio 2 Mlssupporting

confidence: 67%

Section: Sro/sio 2 Mlsmentioning

confidence: 78%

Section: Sro Monolayermentioning

confidence: 96%

Section: Sro/sio 2 Mlsmentioning

confidence: 99%

See 3 more Smart Citations

Synthesis and Luminescent Properties of Silicon Nanocrystals

Coyopol-Solís¹,

Díaz-Becerril²,

Garcı́a-Salgado³

et al. 2018

Nanocrystals and Nanostructures

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Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO₂ multilayers

et al. 2018

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In this paper, we report on the enhanced control of resistive switching in multilayer Si/SiO structures, which permit the formation of Si nanocrystals with a typical size of 5.88 nm and overall good shape homogeneity. The deposition of a different number of Si and SiO bilayers (6, 8 and 10) allowed control of SET/RESET voltages in negative bias ranges 4.5-10 V and 6.3-13 V for six- and ten-bilayer devices, respectively. The corresponding resistance ratio between ON/OFF states varied in the ranges 10-10 for the aforementioned number of bilayers. Based on the result of XPS measurements, we suggest that the resistive switching in the studied system occurs due to the formation and annihilation of Si-Si and Si-O bonds, which serve as conductive pathways and isolating material, respectively.

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Numerical Simulation of an Inverted Perovskite Solar Cell Using a SiOx Layer as Down-Conversion Energy Material to Improve Efficiency and Stability

Paz Totolhua,

Carrillo López,

Benítez Lara

et al. 2023

Materials

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Inverted perovskite solar cells (PSCs) have gained much attention due to their low hysteresis effect, easy fabrication, and good stability. In this research, an inverted perovskite solar cell ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Ag structure was simulated and optimized using SCAPS-1D version 3.3.10 software. The influence on the device of parameters, including perovskite thickness, total defect density, series and shunt resistances, and operating temperature, are discussed and analyzed. With optimized parameters, the efficiency increased from 13.47% to 18.33%. Then, a new SiOx/ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Ag device was proposed which includes a silicon-rich oxide (SiOx) layer. This material was used as the down-conversion energy material, which converts high-energy photons (ultraviolet UV light) into low-energy photons (visible light), improving the stability and absorption of the device. Finally, with SiOx, we obtained an efficiency of 22.46% in the simulation. Therefore, the device with the SiOx layer is the most suitable as it has better values for current density–voltage output and quantum efficiency than the device without SiOx.

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Enhancement of the luminescence by the controlled growth of silicon nanocrystals in SRO/SiO 2 superlattices

Cited by 3 publications

References 17 publications

Synthesis and Luminescent Properties of Silicon Nanocrystals

Synthesis and Luminescent Properties of Silicon Nanocrystals

Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO₂ multilayers

Numerical Simulation of an Inverted Perovskite Solar Cell Using a SiOx Layer as Down-Conversion Energy Material to Improve Efficiency and Stability

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Enhancement of the luminescence by the controlled growth of silicon nanocrystals in SRO/SiO 2 superlattices

Cited by 3 publications

References 17 publications

Synthesis and Luminescent Properties of Silicon Nanocrystals

Synthesis and Luminescent Properties of Silicon Nanocrystals

Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO2 multilayers

Numerical Simulation of an Inverted Perovskite Solar Cell Using a SiOx Layer as Down-Conversion Energy Material to Improve Efficiency and Stability

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Product

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Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO₂ multilayers