Enhancement of thermoelectric properties by Na doping in Te-free p-type AgSbSe<sub>2</sub>

Cai, Songting; Liu, Zihang; Sun, Jianyong; Li, Rui; Fei, Weidong; Sui, Jiehe

doi:10.1039/c4dt03059a

Cited by 40 publications

(68 citation statements)

References 33 publications

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“…Increased population of carriers in the multiple flat valence band valleys of Sb deficient sample produces high m* in AgSb 1-x Se 2 samples (Table 2). The calculated m* values are comparable to the previously reported value for the divalent and monovalent cation doped AgSbSe 2 [24][25][26][27][28]. …”

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confidence: 88%

Sb deficiencies control hole transport and boost the thermoelectric performance of p-type AgSbSe₂

Guin

Biswas

2015

J. Mater. Chem. C

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Electronic supplementary information (ESI) available: thermal diffusivity and heat capacity (Fig. S1), Lorentz numbers (Fig. S2), electronic thermal conductivity (κ ele ) (Fig. S3), heating cooling cycle electrical conductivity (σ) and seebeck coefficient (S) data for AgSb 0.9925 Se 2 sample (Fig. S4).Abstract: Silver antimony selenide, AgSbSe 2 , a Te free analogue of AgSbTe 2 , is known to show promising thermoelectric performance when it was doped with monovalent (M + ) and divalent (M 2+ ) cation in the Sb sublattice. Here, we report a significant enhancement of the thermoelectric performance of p-type nonstoichiometric AgSbSe 2 through Sb deficiencies. Sb deficiencies markedly increase the carrier concentration in AgSbSe 2 without addition of any foreign dopant, which in-turn enhance electrical conductivity in the 300-610 K temperature range. Enhancement in the electrical transport results in a remarkable improvement in the power factor (σS 2 ) value up to ~6.94 μW/cmK 2 at 610 K in AgSb 1-x Se 2 . Notably, we have achieved nearly flat σS 2 of ~6 μW/cmK 2 in the 400-610 K temperature range in Sb deficient samples. Additionally, AgSbSe 2 exhibits ultra-low thermal conductivity due to phonon scattering from bond anharmonicity and disordered cation sub-lattice. With superior electronic transport and ultra-low thermal conductivity, a peak zT value of ~1 at 610 K was achieved for AgSb 0.9925 Se 2 and AgSb 0.99 Se 2 samples. A maximum thermoelectric conversion efficiency (η max ) of ~8% was calculated by considering virtual thermoelectric module consisting of present p-type AgSb 1-x Se 2 and previously reported n-type AgBiSe 2-x Cl x , with maintaining a temperature different of ΔT = 400 K.

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confidence: 88%

Sb deficiencies control hole transport and boost the thermoelectric performance of p-type AgSbSe₂

Guin

Biswas

2015

J. Mater. Chem. C

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“…The corresponding FFT image (Figure 8 f) further demonstrates the existence of stacking faults, playing a vital role in scattering those short-to-medium wavelength phonons. [ 71 ] More importantly, a large quantity of dislocation could be clearly observed inside the grain rather than along the grain boundary, as shown in Figure 8 reveal that the density of dislocation is ≈3.3 × 10 11 cm −2 , as refl ected by the red symbols in Figure 8 h. To study the surrounding strain fi eld around the dislocation cores, high-quality HRTEM image is analyzed via geometric phase analysis (GPA) as the inset in Figure 8 h, [ 72,73 ] both of which could act as effective scattering centers for short-wavelength phonons. Besides, the Li and Mg disorder in the lattice could impede short-wavelength phonon transporting originated from mass and strain fi eld fl uctuations caused by the mass and size differences between host ion Mg 2+ (24.305 g mol −1 , 65 pm) and doping ion Li + (6.94 g mol −1 , 60 pm) for Li-doped samples.…”

Section: All-scale Hierarchical Scattering Architecturementioning

confidence: 97%

Lithium Doping to Enhance Thermoelectric Performance of MgAgSb with Weak Electron–Phonon Coupling

Liu

Wang

Mao

et al. 2016

Advanced Energy Materials

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Despite the unfavorable band structure with twofold degeneracy at the valence band maximum, MgAgSb is still an excellent p‐type thermoelectric material for applications near room temperature. The intrinsically weak electron–phonon coupling, reflected by the low deformation potential Edef ≈ 6.3 eV, plays a crucial role in the relatively high power factor of MgAgSb. More importantly, Li is successfully doped into Mg site to tune the carrier concentration, leading to the resistivity reduction by a factor of 3 and a consequent increase in power factor by ≈30% at 300 K. Low lattice thermal conductivity can be simultaneously achieved by all‐scale hierarchical phonon scattering architecture including high density of dislocations and nanoscale stacking faults, nanoinclusions, and multiscale grain boundaries. Collectively, much higher average power factor ≈25 μW cm−1 K−2 with a high average ZT ≈ 1.1 from 300 to 548 K is achieved for 0.01 Li doping, which would result in a high output power density ≈1.56 W cm−2 and leg efficiency ≈9.2% by calculations assuming cold‐side temperature Tc = 323 K, hot‐side temperature Th = 548 K, and leg length = 2 mm.

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“…13) and AgBi 0.5 Sb 0.5 Se 2 -based solidsolutioned homojunction nanoplates. 31 Meanwhile, remarkable enhancement of thermoelectric performance was observed in solid-state route synthesized I-V-VI 2 compounds through element doping, such as Nb/In doping 13,14 at Ag site and anion (Cl/Br/I) doping 29 at Se site in AgBiSe 2 , Pb/Bi/Cd/Na/Mg/Ba doping 14,[32][33][34] at Sb site and Sn doping 35 at Se site in AgSbSe 2 , etc. To our surprise, AgBiSe 2 synthesized by solution method is a p-type semiconductor at ambient temperature, and reversible p-n-p conduction type switching is also observed in asprepared AgBiSe 2 .…”

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confidence: 99%

Comparing the role of annealing on the transport properties of polymorphous AgBiSe₂ and monophase AgSbSe₂

Zou

Liu

et al. 2018

RSC Adv.

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Enhancement of thermoelectric properties by Na doping in Te-free p-type AgSbSe₂

Cited by 40 publications

References 33 publications

Sb deficiencies control hole transport and boost the thermoelectric performance of p-type AgSbSe₂

Sb deficiencies control hole transport and boost the thermoelectric performance of p-type AgSbSe₂

Lithium Doping to Enhance Thermoelectric Performance of MgAgSb with Weak Electron–Phonon Coupling

Comparing the role of annealing on the transport properties of polymorphous AgBiSe₂ and monophase AgSbSe₂

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Enhancement of thermoelectric properties by Na doping in Te-free p-type AgSbSe2

Cited by 40 publications

References 33 publications

Sb deficiencies control hole transport and boost the thermoelectric performance of p-type AgSbSe2

Sb deficiencies control hole transport and boost the thermoelectric performance of p-type AgSbSe2

Lithium Doping to Enhance Thermoelectric Performance of MgAgSb with Weak Electron–Phonon Coupling

Comparing the role of annealing on the transport properties of polymorphous AgBiSe2 and monophase AgSbSe2

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Enhancement of thermoelectric properties by Na doping in Te-free p-type AgSbSe₂

Sb deficiencies control hole transport and boost the thermoelectric performance of p-type AgSbSe₂

Sb deficiencies control hole transport and boost the thermoelectric performance of p-type AgSbSe₂

Comparing the role of annealing on the transport properties of polymorphous AgBiSe₂ and monophase AgSbSe₂