Superconducting and physical properties of F-doped HgPb-1223 and Ce-doped Tl-1223 systems were considerably improved through adjusting the hole content of the two systems. In this study, we have used the x-ray absorption near-edge structure (XANES) technique to investigate the electronic structure of the two systems by probing the unoccupied electronic states. For the F-doped Hg-1223 system, the O K-edge, Ca L 2,3 and Cu L 2,3 -edge structures were thoroughly investigated. The pre-edge features of O K-edge spectra, as a function of doping, reveal important information about the projected local density of unoccupied states on the O sites in the region close to the absorption edge, which is a measure of O 2p hole concentration in the valence band. In the originally under-doped Hg-1223, the results indicate that the number of O 2p holes in the CuO 2 planes increases as fluorine was introduced up to an optimal value, after which it decreases. Furthermore, the Cu L 2,3 absorption edge provides useful information about the valence state of Cu which is also related to the hole density in the CuO 2 planes and confirms the same previous conclusion. The Ca L 2,3 -edge shows the presence crystal field splitting in HgPb1223/F x which is similar to CaF 2 and CaO in addition to the spin-orbit splitting of the Ca 2p core level electrons. These results ensure that fluorine goes into the structure of HgPb-1223/F x and it occupies the vacant interstitial oxygen site in the Hg-O plane, as was expected. In Ce-substituted Tl-1223, similar measurements were performed for samples with different Ce content. The pre-edge feature of the O K-edge spectra shows clearly the drastic decrease of the hole content in CuO 2 planes of this originally over-doped system with increasing Ce content. This result is also confirmed from the chemical state of Ce in the structure as obtained from the Ce M 4,5 -edge spectra.