Enhancing interface doping in graphene-metal hybrid devices using H2 plasma clean

Achra, Swati; Akimoto, Tomoki; Marneffe, J.-F. de; Sergeant, Stefanie; Wu, Xiangyu; Nuytten, Thomas; Brems, Steven; Asselberghs, Inge; Tőkei, Zsolt; Ueno, Kazuyoshi; Heyns, Marc

doi:10.1016/j.apsusc.2020.148046

Cited by 11 publications

(5 citation statements)

References 53 publications

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“…The graphene surface is usually treated by hydrogen plasma because it can effectively remove the contaminants and the adlayers of the graphene without causing irreversible damage to the graphene structure [110,111]. As shown in figure 6(a), plasma generates low-temperature free radicals [112] to react with organic residue (such as PMMA) [113]. These radicals hydrogenate the edge carbon species with higher reactivity [114].…”

Section: Post-transfer Treatmentmentioning

confidence: 99%

“…Furthermore, different purposes of plasma treatments are obtained by changing the gas environment [124], such as Ga [125], CO 2 [126], etc. Plasma treatment of graphene can change the structure of graphene [127,128], introduce special defects [129][130][131], and specific doping [112,132]. The diversity and flexibility of the plasma processing still need to be further explored.…”

Section: Post-transfer Treatmentmentioning

confidence: 99%

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Plasma assisted approaches toward high quality transferred synthetic graphene for electronics

Wang

Jiang

et al. 2023

Nano Ex.

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Graphene has received much attention in multiple fields due to its unique physical and electrical properties, especially in the microelectronic application. Nowadays, graphene can be catalytically produced on active substrates by chemical vapor deposition and then transferred to the target substrates. However, the widely used wet transfer technique often causes inevitable structural damage and surface contamination to the synthetic CVD graphene, thus hindering its application in high-performance devices. There have been numerous reviews on graphene growth and transfer techniques. Thus, this review is not intended to be comprehensive; instead, we focus on the advanced plasma treatment, which may play an important role in the quality improvement throughout the growth and transfer of graphene. Promising pathways for future applications are also provided.

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Section: Post-transfer Treatmentmentioning

confidence: 99%

Section: Post-transfer Treatmentmentioning

confidence: 99%

Plasma assisted approaches toward high quality transferred synthetic graphene for electronics

Wang

Jiang

et al. 2023

Nano Ex.

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“…This shift in Dirac point is typically associated with p-doping behavior, originating from the polymeric transfer residues present on the surface after solvent treatment as demonstrated in Fig. 1 (a)-(d) [52][53][54][55] . However, after H 2 DPS exposure, the Dirac point shifts towards 0point voltage, once more con rming the effectiveness of plasma cleaning.…”

Section: Electrical Characterization Of Back-gated Gro Fetmentioning

confidence: 99%

Enabling high quality dielectric passivation on Monolayer WS2 using a sacrificial Graphene Oxide template

Wyndaele¹,

Marneffe²,

Sergeant³

et al. 2023

Preprint

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Two-dimensional transition metal dichalcogenides (2D TMDC’s) hold a wide variety of applications, among which microelectronic devices. However, various challenges hinder their integration e.g., good dielectric deposition on the 2D TMDC surface. In this work, a sacrificial, Graphene oxide (GrO)-based buffer layer is used to 1) serve as a passivation layer, protecting the underlying 2D TMDC (WS2) and 2) act as a nucleation layer, enabling uniform dielectric (HfO2) growth. A Graphene layer is transferred on monolayer WS2, after which polymeric transfer residues are cleaned via a combination of wet- and dry treatments. Next, the cleaned Graphene is functionalized via a dry UV/O3 oxidative exposure. It is shown that the Graphene UV/O3 oxidation rate is substrate dependent and proceeds slower when Graphene is transferred on WS2 compared to SiO2, due to UV-light induced, ultrafast charge transfer between the Graphene and WS2 monolayer. The carbon-oxygen groups formed on Graphene’s basal plane act as nucleation sites in a subsequent HfO2 atomic layer deposition process, achieving a smoother dielectric layer in comparison to direct deposition on bare WS2. Finally, by means of a GrO FET device, it is shown that the GrO nucleation layer does not compromise the device transport characteristics i.e., will not give rise to significant leakage currents in a 2D heterostack device.

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“…This is because the reaction particles generated in the mixed plasma react with its surface components and removed the oxide layer. When Ar/H 2 plasma cleaning was used to improve the interface doping of graphene‐metal hybrid devices, [ 28 ] it was discovered that the mixture of Ar/H 2 could efficiently remove the residue on the polymer surface, while preserving graphene's high crystallinity and film quality. Sulfide can also be removed from the surface of silver by the mixture of H 2 and He.…”

Section: Treatment Mechanism Of Multicomponent Plasmamentioning

confidence: 99%

Interfacial properties of multicomponent plasma‐modified high‐performance fiber‐reinforced composites: A review

et al. 2022

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This study reveals the interfacial properties of multicomponent plasma with four aspects, including cleaning, etching, functionalization, and polymerization. Particles formed by plasma ionization collide to form volatile groups, which can interact with the surface to form volatile substances that clean the surface. The multicomponent plasma etching effect on the surface is significant, and O 2 and N 2 may interact to improve oxidation capacity. Inert gas argon (Ar) can be combined with reactive gases O 2 , N 2 , and NH 3 to introduce hydroxyl and amine groups and other active groups to change the surface's chemical structure. When a multicomponent plasma polymerizes, a film forms on the surface, changing the chemical composition. The cross-linking of gases has a positive effect on the properties of the deposited layer as well. The treatment of various fiber materials, nanoparticles, polymer films, and matrix materials with multicomponent plasma is summarized. The multicomponent plasma significantly improves surface wettability and roughness, and oxygen species aid in the etching of nanomaterials, which improves interface properties. The gas types determine the groups introduced to the surface and the surface attachment site.

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Enhancing interface doping in graphene-metal hybrid devices using H2 plasma clean

Cited by 11 publications

References 53 publications

Plasma assisted approaches toward high quality transferred synthetic graphene for electronics

Plasma assisted approaches toward high quality transferred synthetic graphene for electronics

Enabling high quality dielectric passivation on Monolayer WS2 using a sacrificial Graphene Oxide template

Interfacial properties of multicomponent plasma‐modified high‐performance fiber‐reinforced composites: A review

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