2012
DOI: 10.1109/tvlsi.2011.2109973
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Enhancing NBTI Recovery in SRAM Arrays Through Recovery Boosting

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Cited by 29 publications
(19 citation statements)
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“…In our simulation, the temperature is 90°C, which is the average operating temperature for high-performance processors [21]. As expected, because of the asymmetrical structure of RF bit-cells, the power characteristics are data dependent.…”
Section: E Circuit-level Evaluations On Power Efficiencymentioning
confidence: 70%
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“…In our simulation, the temperature is 90°C, which is the average operating temperature for high-performance processors [21]. As expected, because of the asymmetrical structure of RF bit-cells, the power characteristics are data dependent.…”
Section: E Circuit-level Evaluations On Power Efficiencymentioning
confidence: 70%
“…In [20], an adaptive body bias technique was introduced to reduce the impact of NBTI and process variation. Most recently, Siddiqua and Gurumurthi [21] proposed recovery boosting RF which allows both pMOS devices in the bit-cell to be put into the recovery mode. In [22], a hybrid-cell RF design was presented to mitigate NBTI-induced degradation by storing more vulnerable data bits in the robust 8T cells and the less vulnerable bits in the conventional 6T cells.…”
Section: B Related Work On Reliable Rf Designmentioning
confidence: 99%
“…As such, it does not relieve any HCI aging compared to our other schemes but can be beneficial as equally aged transistors have smaller leakage power. The DCM mode can also be coupled with NBTI recovery schemes such as [21]. We explain the DCM mode in more detail in Section S4.…”
Section: Distributed Cycle Mode (Dcm)mentioning
confidence: 99%
“…While there has been a wide scope of studies tackling different reliability issues (NBTI, TDDB, HCI) in processing elements [11,21], there is only a limited number of works which address wear-out mitigation in the on-chip communication infrastructure of such systems. Bhardwaj et al implemented a dynamic routing algorithm to equalize NBTI and electromigration aging across the on-chip network [3].…”
Section: Related Workmentioning
confidence: 99%
“…This chapter covers work published in ISVLSI 2010 [2] and in the IEEE Transactions on VLSI 2011 [3].…”
Section: Discussionmentioning
confidence: 99%