Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers

Wang, Wenjie; Liao, Mingle; Yuan, Jun; Luo, Siyuan; Huang, Fenglan

doi:10.1088/1674-1056/ac597c

Cited by 7 publications

(2 citation statements)

References 28 publications

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“…The highest current value is obtained when the thickness of the GaN substrate is 0.1m and the lowest value is obtained when the thickness is 0.5m, as shown in Figure 4 (inset). The effects of increase of layer thickness at p-region were gradual increase the efficiency [23]. In reference to the curves of p-region of GaN/p-Si solar cell, the efficiency shows a decline in efficiency as the thickness increases from 30μm to 150μm.…”

Section: N-region Thicknessmentioning

confidence: 94%

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2023

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In this study, we used the PC1D simulator to demonstrate the performance analysis of a solar cell model based on gallium nitride (GaN). It has been discovered that when the layer thickness of the GaN substrate grows, the efficiency of solar cells decreases. This was found by comparing the doping concentration and layer thickness on the GaN and silicon substrates. As the thickness of the p-doping Si layer rises, cell efficiency increases just modestly. The optimal doping concentrations for GaN and p-silicon are 1x10 18 cm -3 and 1x10 17 cm -3 , respectively. In compared to other designs, GaN/p-silicon solar cells have the highest efficiency of 25.26%.

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Section: N-region Thicknessmentioning

confidence: 94%

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2023

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“…The ratio of conduction band offset △Ec to the valence band offset △Ev of InGaN/InGaN quantum well is assumed to be 0.7/0.3. The setting of some other parameters, including absorption coefficient and refractive index of ternary alloy, is referred to our previous work [10]. Note that the change in growth conditions results in a wide band gap bending parameter spectrum for ternary nitride alloys.…”

Section: Designmentioning

confidence: 99%

Effects of AlInGaN electron barrier layer with different aluminum components on the photoelectric properties of GaN-based laser

Wang,

Liao,

Luo

et al. 2024

Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023)

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The effects of AlInGaN electron barrier layer (EBL) on the photoelectric properties of gallium nitride laser with reduced polarization of different aluminum components is numerically simulated by crosslight software. Compared with the Al0.322In0.08Ga0.598N EBL, the Al0.447In0.174Ga0.379N EBL with higher Al component improves the photoelectric performance of laser, achieving lower threshold current and higher output power. The reason is that the use of Al0.447In0.174Ga0.379N electron barrier material with higher Al component further reduces the polarization effect, thus improving the hole injection efficiency and reducing the electron leakage. Simulation results reveal that the threshold current decreases from 25.3mA to 22.6mA, and the output power increases from 98.3mW to 155.9mW. At the same time, the optical field distribution of higher Al component EBL structure laser is more concentrated in the active region, which further reduces the absorption loss, so that the optical confinement factor increases from 1.14% to 1.2%, and the slope efficiency also increases from 0.77W/A to 1.18W/A.

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Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes

Chen 陈,

Zhao 赵,

Liang 梁

et al. 2024

Chinese Phys. B

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Multidimensional influence of indium composition in barrier layers on GaN-based blue laser diodes (LDs) are discussed through both material quality and device physics perspectives. LDs with higher indium content in the barriers demonstrate a notably lower threshold current and shorter lasing wavelength compared to those with lower indium content. Our experiments reveal that higher indium content in the barrier layers can partially reduce indium composition in the quantum wells, a novel discovery. Employing higher indium content barrier layers leads to improved luminescence properties of MQW region. Detailed analysis reveals that this improvement can be attributed to better homogeneity in the indium composition of the well layers along the epitaxy direction. InGaN barrier layers suppressed lattice mismatch between barrier and well layers, thus mitigating the indium content pulling effect in well layers. In supplement to experimental analysis, theoretical computations are performed, showing that InGaN barrier structures can effectively enhance carrier recombination efficiency and optical confinement of LD structure, thus improving output efficiency of GaN-based blue LDs. Combining these theoretical insights with our experimental data, we propose that higher indium content barriers effectively enhance carrier recombination efficiency and indium content homogeneity in quantum well layers, thereby improving the output performance of GaN-based blue LDs.

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Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers

Cited by 7 publications

References 28 publications

Untitled

Untitled

Effects of AlInGaN electron barrier layer with different aluminum components on the photoelectric properties of GaN-based laser

Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes

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