“…We model ITO with a Drude model, which provides an adequate and accurate description of its permittivity in the visible-IR regime [32,33,39,41,42]. ITO can be heavily doped using rf sputter deposition, yielding a carrier concentration in the range 10 19 − 10 21 / cm 3 with a plasma frequency in the infrared range. Following previous experimental results [32,33,39,43], we investigate here ITO with background carrier concentration of 5 × 10 20 / cm Active tunability of the carrier concentration of ITO in metal-oxide-semiconductor (MOS) structures by up to two orders of magnitude has been reported previously [32,33,34,40,41].…”