Enhancing the Etch Rate at Backside Etching of Fused Silica

Abstract

Employing optical phase-contrast microscopy we study the morphology of ultrashort pulsed laser-induced modifications in bulk fused silica and in other optical transparent materials for different conditions of irradiation. The influence of the input pulse energy, focusing depth, and number of pulses per site is investigated in order to establish optimal irradiation conditions for direct writing of waveguiding elements. The results obtained suggest that an increase of the refractive index is systematically accompanied by a region of lower index of refraction along the optical axis, presumably due to micro-explosion in the high energy-exposed regions, and the locations of this region is material dependent. Nevertheless, the creation of an hypothetical void in the interaction zone does not allow a complete explanation of the modifications observed and other mechanisms have to be invoked to explain the presence of regions with higher index of refraction. Different interaction regimes with respect to the input energy and to the number of shots per site can be established from these observations, emphasizing the role of nonlinear pulse propagation and plasma generation. To complement the experimental observations we simulate the propagation of an ultrashort laser pulse in bulk silica using the non-linear Schrödinger equation and determine the distribution of energy along the propagation axis. The results are in good agreement with the experimental observations and provides insights into the mechanisms controlling the interaction between ultrashort laser pulses and transparent materials.

Laser‐induced front side etching of fused silica with KrF excimer laser using thin chromium layers

“…During the front side etching process, the laser beam is focused onto the absorber layer and during the back side etching the laser beam is directly guided through the fused silica to the absorber layer. Regarding the absorber material configuration back side etching can be classified into different methods: Laser‐induced back side wet etching (LIBWE) 7–10, laser‐induced plasma‐assisted ablation (LIPAA) 10, 11, laser etching at a surface‐adsorbed layer (LESAL) 12, 13 and laser‐induced dry etching (LIBDE) 14–16.…”

Ablation of silicon suboxide thin layers

“…These methods employ an auxiliary medium which absorbs the UV laser photons and transfers some of the energy to the fused silica resulting in material removal. Some of these methods and variations thereof are known as laser-induced backside wet-etching (LIBWE) [6][7][8], laser-induced plasma assisted ablation (LIPAA) [9], laser etching at a surface adsorbed layer (LESAL) [10], and, more recently, laserinduced backside dry etching (LIBDE) [11]. LIBDE, which commonly uses metal absorbers, has been thoroughly studied [12,13] and is a promising technique for laser microprocessing of transparent materials.…”