Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain

Holmér, Jonatan; Zeng, Lunjie; Kanne, Thomas; Krogstrup, Peter; Nygård, Jesper; Olsson, Eva

doi:10.1021/acs.nanolett.1c02468

Cited by 7 publications

(8 citation statements)

References 45 publications

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“…[5,44,47,48] The hysteresis loop caused by the abundant surface states of as-prepared NWs could be further reduced by surface passivation, construction of core-shell NWs and introduction of stress, etc. [49][50][51] Furthermore, the mobility of as-fabricated NWFETs is calculated by using the low-bias (e.g., V DS = 0.1 V) transconductance in the transfer characteristics, g m = (dI DS )/(dV GS )| V DS , and the analytical expression, μ = g m (L 2 /C OX )(1/V DS ), where C OX is the gate capacitance obtained from the finite element analysis software COMSOL with respect to different diameters of NW. [45,52] With the known NW length (in the channel of FET) and diameter, the field-effect mobility of NW can be yielded reliably.…”

Section: Resultsmentioning

confidence: 99%

Substrate‐Free Chemical Vapor Deposition of Large‐Scale III–V Nanowires for High‐Performance Transistors and Broad‐Spectrum Photodetectors

Yin

Guo

Liu

et al. 2022

Advanced Optical Materials

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the near future by constructing all-around NWs field-effect-transistors (NWFETs), complementary metal-oxide-semiconductor (CMOS) inverts, etc. [6,7] On the other hand, with narrow bandgaps of 0.35 and 0.77 eV, InAs and GaSb NWs are also considered as the ideal channel semiconductors for next-generation high-performance infrared photodetectors, demonstrating high responsivity of ≈10 4 AW -1 and detectivity of ≈10 12 Jones for near-infrared to middleinfrared at room temperature. [8][9][10] Especially, with a closing bandgap (1.42 eV) of Shockley-Queisser limit, typical III-V semiconductor of GaAs NW has been studied in the fields of not only infrared photodetectors but also high-efficiency solar cells. [11][12][13][14] Owing to the extreme photon collection boost in free-standing NWs, the efficiency of single GaAs NW can be as high as 40%. [14] Recently, for achieving high-performance broad-spectrum photodetectors, ternary alloy III-V semiconductors of InGaAs NWs and GaAsSb NWs with full composition range have become the research stars. [15][16][17][18][19] The hot development of wearable or flexible optoelectronic devices is challenging the research of III-V NWs. [20][21][22][23] Recently, lightweight structured fabrics with tunable mechanical properties enabled by non-convex interlocked particles have been realized by Wang et al. [20] Obviously, the successful growth of largescale high-quality III-V NWs on the expected novelty functional fabrics directly will promote the next-generation wearable or flexible electronics and photoelectronics. In the past decades, metal-organic chemical vapor deposition, molecular beam epitaxy, metal-organic vapor phase epitaxy, and chemical vapor deposition (CVD) methods are the commonly adopted technologies for the growth of high-quality III-V NWs. [24][25][26][27][28][29][30][31][32][33] Generally speaking, expensive wafers of GaSb, InAs, GaAs, InP, etc. are used as the growth substrates for overcoming the lattice mismatch during NWs growth process. [34,35] Fortunately, metals of Au, Sn, Pd, etc. can be deposited on the selected substrates as growth catalysts for III-V NWs, followed by vapor-liquidsolid (VLS) or vapor-solid-solid (VSS) growth mechanism. [36,37] Generally speaking, during the VLS growth process, the adopted metals catalysts are liquid, which requires the eutectic Large-scale growth of high-quality III-V nanowires (NWs) on an expected substrate is challenging the next-generation optoelectronic devices. In this work, high-quality III-V NWs of binary GaSb, GaAs and ternary GaAs x Sb 1−x , In x Ga 1−x As are successfully prepared on the hard substrates of SiO 2 /Si, amorphous glass and flexible substrates of mica, glass fiber, and carbon cloth by adopting the simple and low-cost metal-catalyzed chemical vapor deposition (CVD) method. The homogeneity of morphology, crystallinity, and stoichiometry is checked by scanning electron microscopy, X-ray diffraction, high-resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy, implying the high-q...

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Section: Resultsmentioning

confidence: 99%

Substrate‐Free Chemical Vapor Deposition of Large‐Scale III–V Nanowires for High‐Performance Transistors and Broad‐Spectrum Photodetectors

Yin

Guo

Liu

et al. 2022

Advanced Optical Materials

View full text Add to dashboard Cite

show abstract

“…Therefore, it was first used for high-speed electronic devices such as high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). [1][2][3] Concurrently, GaAs is also employed for optoelectronic devices such as solar cells and laser diodes [4][5][6] due to its direct bandgap a layer integration with UV absorbing materials in GaAs has been studied as an alternative way to enhance the responsivity of GaAs photodetectors. For example, Xu et al [24] constructed MoS 2 /GaAs heterojunction photodetectors which were capable of detecting 325 to 635 nm UV-visible light.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, it was first used for high‐speed electronic devices such as high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). [ 1–3 ] Concurrently, GaAs is also employed for optoelectronic devices such as solar cells and laser diodes [ 4–6 ] due to its direct bandgap characteristic with a bandgap energy of ≈1.4 eV. The bandgap energy also enables its usage in visible photodetection.…”

Section: Introductionmentioning

confidence: 99%

Distinct UV–Visible Responsivity Enhancement of GaAs Photodetectors via Monolithic Integration of Antireflective Nanopillar Structure and UV Absorbing IGZO Layer

Liao

Zheng

Shin

et al. 2022

Advanced Optical Materials

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characteristic with a bandgap energy of ≈1.4 eV. The bandgap energy also enables its usage in visible photodetection. [7,8] In addition, GaAs has exhibited its potentials in the ultraviolet (UV) photodetection due to the high absorption coefficient. [9,10] Nowadays, broadband UV-visible photodetectors exhibit outstanding application potentials in areas such as environment, energy, and imaging. [11] Among various semiconductor materials, GaAs is one of the best candidates for broadband UV-visible photodetection considering the suitable bandgap for visible light detection and high absorption coefficient in UV range.However, two challenges still exist in improving the UV-visible responsivity of GaAs photodetectors: 1) surface reflection loss of incident light and 2) shallow penetration depth of GaAs in UV range. The former issue can be effectively ameliorated by employing various antireflection schemes. Among them, surface texturing such as textured GaAs, [12,13] GaAs nanocones [14,15] and porous GaAs [16][17][18][19] has shown a facile and effective way to achieve a broadband antireflection, compared with a multilayered antireflection coating which requires a precise control of refractive index and thickness of individual layer. [20] Although some of these works on surface texturing demonstrated low UV-visible reflection below 5%, none of them have systematically studied an implication of the textured antireflection layer in GaAs photodetectors and their performance enhancement in a broadband UV-visible range. For example, Namiki et al. [21] fabricated GaAs nanogrooves which exhibited distinctly reduced reflectance from 400 to 1000 nm wavelength. However, this photodetector was only characterized under 532 nm visible illumination and its performance enhancement in a broadband UV-visible range was not reported. In fact, it is challenging to realize the UV performance enhancement in GaAs photodetectors due to the latter issue, i.e., the shallow penetration depth of UV light in GaAs which leads to significant loss of photocarriers by recombination. [22] The surface recombination is expected to be more severe in UV range for antireflective structures due to potential formation of more surface states as traps and recombination centers which are introduced by larger surface areas and fabrication methods such as etching. [12,23] On the other hand, Broadband ultraviolet-visible photodetection has been attracting growing research interests in fields of environment, energy, and imaging. Considering the suitable bandgap and high absorption coefficient, GaAs is one of the best candidates for ultraviolet-visible photodetection. In this work, a monolithic integration strategy of nanopillar antireflective structure and InGaZnO (IGZO) ultraviolet absorbing layer is proposed to enhance the ultraviolet-visible spectral responsivity of GaAs photodetectors. Both nanopillar topography and IGZO layer exhibit antireflective performance, leading to the enhancement of the light absorption and responsivity of the photodetectors. By the comb...

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“…17,18 In particular, semiconducting NWs are laying forth massive prospects for the development of new-age nano- and micro-optoelectronic devices that have the potential to conquer the limits laid down by Moore's law. 19–22 In the recent past, semiconductor nanowires have been known to find applications in the fields of electronics, 23–28 photovoltaics, 29–35 thermoelectric devices, 36–43 gas sensing 44–51 and photocatalysis. 52–57…”

Section: Introductionmentioning

confidence: 99%

“…17,18 In particular, semiconducting NWs are laying forth massive prospects for the development of new-age nano-and microoptoelectronic devices that have the potential to conquer the limits laid down by Moore's law. [19][20][21][22] In the recent past, semiconductor nanowires have been known to find applications in the fields of electronics, [23][24][25][26][27][28] photovoltaics, [29][30][31][32][33][34][35] thermoelectric devices, [36][37][38][39][40][41][42][43] gas sensing [44][45][46][47][48][49][50][51] and photocatalysis. [52][53][54][55][56][57] In the last few years, plenty of research has been done on Group IV-VI two dimensional (2D) structures.…”

Section: Introductionmentioning

confidence: 99%

Modulation of electronic bandgaps and subsequent implications on SQ efficiencies via strain engineering in ultrathin SnX (X = S, Se) nanowires

et al. 2022

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Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain

Cited by 7 publications

References 45 publications

Substrate‐Free Chemical Vapor Deposition of Large‐Scale III–V Nanowires for High‐Performance Transistors and Broad‐Spectrum Photodetectors

Substrate‐Free Chemical Vapor Deposition of Large‐Scale III–V Nanowires for High‐Performance Transistors and Broad‐Spectrum Photodetectors

Distinct UV–Visible Responsivity Enhancement of GaAs Photodetectors via Monolithic Integration of Antireflective Nanopillar Structure and UV Absorbing IGZO Layer

Modulation of electronic bandgaps and subsequent implications on SQ efficiencies via strain engineering in ultrathin SnX (X = S, Se) nanowires

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