Enhancing the open circuit voltage of the SnS based heterojunction solar cell using NiO HTL

Ahmmed, Shamim; Aktar, Asma; Hossain, Jaker; Ismail, Abu Bakar Md.

doi:10.1016/j.solener.2020.07.003

Cited by 111 publications

(50 citation statements)

References 41 publications

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“…According to calculation studies undertaken by Xu et al in 2014, the SnS/ZnS junction is predicted as the best combination for a high performance device. A more recent numerical calculation study proposed a CeO 2 /SnS/NiO heterojunction, where CeO 2 is the electron transport layer and NiO is the hole transport layer, and showed that an efficiency of 25.1% can be achieved by the junction …”

Section: Emerging Binary Chalcogenides For Solar Energy Conversionmentioning

confidence: 99%

“…A more recent numerical calculation study proposed a CeO 2 /SnS/NiO heterojunction, where CeO 2 is the electron transport layer and NiO is the hole transport layer, and showed that an efficiency of 25.1% can be achieved by the junction. 71 As mentioned above, synthesizing phase pure SnS while suppressing the formation of secondary phases such as SnS 2 is an important challenge. Moon's group recently reported that the secondary phase of SnS 2 can be suppressed by changing the relative amount of the Sn precursor to the sulfur precursor.…”

Section: Strategies Formentioning

confidence: 99%

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Emerging Binary Chalcogenide Light Absorbers: Material Specific Promises and Challenges

2021

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In the quest for higher efficiency and lower cost solar energy conversion devices, new light absorber materials are being intensively researched. With their attractive optical and electrical properties, metal chalcogenide materials have emerged as promising candidates for these nextgeneration light absorbers. In this review, we survey studies on chalcogenide light absorbers having a simple binary composition, namely, Cu 2 S, SnS, GeSe, WSe 2 , Sb 2 S 3 , and Sb 2 Se 3 . Each material has its own unique strengths and weaknesses in terms of cost, abundance, optoelectronic properties, secondary phase formation, anisotropic carrier transport, and defect properties. After critical consideration of the unique properties, we scrutinize recently developed strategies for overcoming the material specific challenges while presenting future perspectives on each material.

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Section: Emerging Binary Chalcogenides For Solar Energy Conversionmentioning

confidence: 99%

Section: Strategies Formentioning

confidence: 99%

Emerging Binary Chalcogenide Light Absorbers: Material Specific Promises and Challenges

2021

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“…[ 9 ] The origin for the relatively low energy conversion efficiency of α‐Ag 2 S solar cells may be attributed to relatively high defect densities, as reported for some of other TMS materials. [ 10 ]…”

Section: Introductionmentioning

confidence: 99%

“…[9] The origin for the relatively low energy conversion efficiency of α-Ag 2 S solar cells may be attributed to relatively high defect densities, as reported for some of other TMS materials. [10] Therefore, to realize the full potential of α-Ag 2 S for the above applications, producing high-quality thin films with relatively low defect density and excellent charge transport properties (e.g., high carrier mobility) is mandatory. Over the past decades, several methods have been developed to prepare Ag 2 S thin films, such as chemical bath deposition (CBD), [11] epitaxial growth, [12] chemical vapor deposition, [13] spray pyrolysis, [14] and electrodeposition.…”

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confidence: 99%

Solution‐Processed Wafer‐Scale Ag₂S Thin Films: Synthesis and Excellent Charge Transport Properties

Wang

Zhang

et al. 2022

Adv Funct Materials

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Monoclinic α-Ag 2 S is an intriguing member of transition metal sulfides with great potential for all-inorganic flexible optoelectronics and thermoelectrics. Fabrication of large-area, high-quality α-Ag 2 S thin films and understanding their charge transport properties are critical for device operations yet have remained largely unexplored. Here, a novel two-step, the solution-processed approach is reported to produce wafer-sized, highly crystalline α-Ag 2 S thin films. Ultrafast terahertz (THz) conductivity measurements reveal that photogenerated charge carriers undergo efficient band transport, with roomtemperature mobility of ≈150 cm 2 V -1 s -1 and a diffusion length exceeding 500 nm. Furthermore, introducing poly(vinyl alcohol) (PVA) as the rigid component into the aqueous silver thiolate precursor enables the synthesis of free-standing α-Ag 2 S thin films with a mobility of ≈35 cm 2 V -1 s -1 , demonstrating their potential for flexible optoelectronics. This study provides a facile synthesis route for high-quality, large-area α-Ag 2 S thin films with good charge transport properties, relevant for their integration into optoelectronics and wearable electronics.

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“…The energy band alignment of n-type ZnO is suitably matched with p-type CuO. , Therefore, ZnO could be a promising electron transport layer (ETL) for the CuO-based solar cells. Furthermore, few research groups have experimented on ZnO-CuO-based solar cells in recent years, but the reported efficiency of these solar cells is very low. ,− There are many effective ways to improve the performance of the heterojunction solar cell (HSC) like band gap tuning, , band alignment engineering, , crystallinity improvement of the absorber layer, use of charge-selective layers, − etc. Kaphle and co-workers have worked on the band alignment engineering of the ZnO-CuO-based heterojunction solar cell and observed a considerable performance improvement .…”

Section: Introductionmentioning

confidence: 99%

Role of a Solution-Processed V₂O₅ Hole Extracting Layer on the Performance of CuO-ZnO-Based Solar Cells

2021

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In this research, a heterostructure of the CuO-ZnO-based solar cells has been fabricated using low-cost, earth-abundant, non-toxic metal oxides by a low-cost, low-temperature spin coating technique. The device based on CuO-ZnO without a hole transport layer (HTL) suffers from poor power conversion efficiency due to carrier recombination on the surface of CuO and bad ohmic contact between the metal electrode and the CuO absorber layer. The main focus of this research is to minimize the mentioned shortcomings by a novel idea of introducing a solution-processed vanadium pentoxide (V 2 O 5 ) HTL in the heterostructure of the CuO-ZnO-based solar cells. A simple and low-cost spin coating technique has been investigated to deposit V 2 O 5 onto the absorber layer of the solar cell. The influence of the V 2 O 5 HTL on the performance of CuO-ZnO-based solar cells has been investigated. The photovoltaic parameters of the CuO-ZnO-based solar cells were dramatically enhanced after insertion of the V 2 O 5 HTL. V 2 O 5 was found to enhance the open-circuit voltage of the CuO-ZnO-based solar cells up to 231 mV. A detailed study on the effect of defect properties of the CuO absorber layer on the device performance was theoretically accomplished to provide future guidelines for the performance enhancement of the CuO-ZnO-based solar cells. The experimental results indicate that solution-processed V 2 O 5 could be a promising HTL for the low-cost, environment-friendly CuO-ZnO-based solar cells.

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Enhancing the open circuit voltage of the SnS based heterojunction solar cell using NiO HTL

Cited by 111 publications

References 41 publications

Emerging Binary Chalcogenide Light Absorbers: Material Specific Promises and Challenges

Emerging Binary Chalcogenide Light Absorbers: Material Specific Promises and Challenges

Solution‐Processed Wafer‐Scale Ag₂S Thin Films: Synthesis and Excellent Charge Transport Properties

Role of a Solution-Processed V₂O₅ Hole Extracting Layer on the Performance of CuO-ZnO-Based Solar Cells

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Enhancing the open circuit voltage of the SnS based heterojunction solar cell using NiO HTL

Cited by 111 publications

References 41 publications

Emerging Binary Chalcogenide Light Absorbers: Material Specific Promises and Challenges

Emerging Binary Chalcogenide Light Absorbers: Material Specific Promises and Challenges

Solution‐Processed Wafer‐Scale Ag2S Thin Films: Synthesis and Excellent Charge Transport Properties

Role of a Solution-Processed V2O5 Hole Extracting Layer on the Performance of CuO-ZnO-Based Solar Cells

Contact Info

Product

Resources

About

Solution‐Processed Wafer‐Scale Ag₂S Thin Films: Synthesis and Excellent Charge Transport Properties

Role of a Solution-Processed V₂O₅ Hole Extracting Layer on the Performance of CuO-ZnO-Based Solar Cells