2018
DOI: 10.1039/c8ta04490b
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Enhancing the photovoltaic performance of GaAs/graphene Schottky junction solar cells by interfacial modification with self assembled alkyl thiol monolayer

Abstract: We demonstrate the fabrication of highly-efficient GaAs/graphene Schottky junction solar cells by interfacial modification with a self-assembled alkyl thiol monolayer.

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Cited by 18 publications
(10 citation statements)
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“…As a result, the loss of PCE is within 3% of the original PCE (absolutely from 1.45 to 1.40%) during 3000 h (Figure b), suggesting higher stability than Gr-based semiconductor solar cells (Table ). , This result can be explained that the PCE of the TETA-Gr/LaVO 3 cell is almost constant because the TETA molecule with a high-molecular weight and a functional group of ethylene amine in bonding to Gr is very stable at air …”
Section: Resultsmentioning
confidence: 97%
“…As a result, the loss of PCE is within 3% of the original PCE (absolutely from 1.45 to 1.40%) during 3000 h (Figure b), suggesting higher stability than Gr-based semiconductor solar cells (Table ). , This result can be explained that the PCE of the TETA-Gr/LaVO 3 cell is almost constant because the TETA molecule with a high-molecular weight and a functional group of ethylene amine in bonding to Gr is very stable at air …”
Section: Resultsmentioning
confidence: 97%
“…19,29 Another possibility, shown on thiol modified gold substrates, is for nanoshaving to be performed in situ, in a solution containing a different thiol, resulting in substitutional grafting, a process called "nanografting". 30 The pristine graphite surface can also be decorated noncovalently with a large variety of self-assembled supramolecular networks (SAMNs) and is used for modifying charge transport properties, 31−33 templation, 34,35 passivation, 36 host−guest chemistry, 37,38 and beyond. Improving the control over their assembly properties and deposition is consequently an important field of research.…”
Section: ■ Introductionmentioning
confidence: 99%
“…The pristine graphite surface can also be decorated noncovalently with a large variety of self-assembled supramolecular networks (SAMNs) and is used for modifying charge transport properties, templation, , passivation, host–guest chemistry, , and beyond. Improving the control over their assembly properties and deposition is consequently an important field of research.…”
Section: Introductionmentioning
confidence: 99%
“…As III-V cells have suitable properties acting as top cells, a series of strategies have been investigated to fabricate III-V/Si tandem cells including direct growth, [1][2][3] wafer bonding, [4,5] and mechanical stacking. [6,7] Although the growth techniques based on GaAs substrate have been intensively investigated, [8][9][10] due to the mismatched lattice constants and thermal expansion coefficients between III-V and Si, the efficiency of III-V/Si MJSCs by the direct growth approach is still limited to 24.3%. [11] The surface-activated wafer bonding method can overcome the lattice mismatch issue and has achieved an efficiency of 34.1%.…”
Section: Introductionmentioning
confidence: 99%