Enlarged memory margins for resistive switching devices based on polyurethane film due to embedded Ag nanoparticles

Liu, Lu; Lu, Kailei; Yan, Dong; Zhang, Jiazhen; Ma, Chi; Jia, Zhengqiang; Wang, Wen; Zhao, Enming

doi:10.1016/j.sse.2018.06.003

Cited by 6 publications

(1 citation statement)

References 28 publications

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“…However, there are still some limitations on the electrical performance of organic ReRAM with single organic function layer. Therefore, to further enhance the performance of the organic materials based ReRAM, inorganic nanoparticles, especially metal NPs, can be embedded in organic materials as active layer to achieve low‐power consumption, low SET and RESET voltage and high density storage . For instance, Au nanoparticles embedded in PVK along with PEDOT:PSS were used as functional layers with stacking structure to fabricate resistive switching memory device with good retention and ultrahigh ON/OFF ratio .…”

Section: Resistive Switching Memorymentioning

confidence: 99%

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

Wang

Zhang

Zhou

et al. 2019

Physica Rapid Research Ltrs

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As one of the five basic components in a modern computer system, memory plays a key role in data storage while the Von Neumann architecture still occupies a principal position in modern digital era. With the rapid development of portable electronic devices, non‐volatile memories are of great importance in human's daily life. High‐performance memory devices are highly demanded, and novel materials applied to flash memory and resistive random access memory (ReRAM) have been widely investigated. The functionalities of memories can be broadened with the development of semiconductor technologies. As a facile and low‐power electromagnetic wave, light can be another modulation medium, which will not bring destructive operation and can enhance the device performance. In this review, the focus is on flash memory and ReRAM based on various functional materials as well as the recent development of photo‐tunable memories.

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Section: Resistive Switching Memorymentioning

confidence: 99%

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

Wang

Zhang

Zhou

et al. 2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

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Polymer Nanocomposites for Resistive Switching Memory

Saqib

Khan

Bae

2021

Polymer Nanocomposite Materials

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Optimization of annealing conditions for Ag/p–GaN ohmic contacts

Pan

et al. 2021

Appl. Phys. A

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The electrical and optical properties of Ag/p–GaN contacts have been investigated as a function of the annealing temperature, oxygen concentration, and annealing time. Specific contact resistance ( ρ c ) values as low as 1.2 × 10 –4 Ω·cm 2 were obtained from the Ag/p–GaN contact annealed at 400 °C for 60 s in ambient O 2 /N 2 (1:10). We found that the participation of oxygen improves the formation of ohmic contacts. Oxygen might remove the H in Mg–H complexes to activate the Mg acceptors and enhance Ga out-diffusion to form an Ag–Ga solid solution. We also found that the reflectivity of the Ag layer decreases with increasing annealing temperature in the O 2 -containing ambient environment. Thus, an optimal annealing condition of Ag/p–GaN for blue and green LEDs is suggested based on these results. We also used the suggested annealing conditions to form ohmic contacts on DUV LEDs and achieved good electrical performance. The forward voltages of UVC LEDs fabricated with annealed Ag contacts were 6.60 V (7.66 V) at a 40 mA (100 mA) injection current.

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Enlarged memory margins for resistive switching devices based on polyurethane film due to embedded Ag nanoparticles

Cited by 6 publications

References 28 publications

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

Polymer Nanocomposites for Resistive Switching Memory

Optimization of annealing conditions for Ag/p–GaN ohmic contacts

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