“…They attributed it to the reduction of the built-in electric field induced by excited carriers 32 . However, a red shift of the UV emission was observed in ZnO nanorods grown with similar method to this work 19,33 . Alvi et al .…”
Section: Resultssupporting
confidence: 73%
“…Then the remaining vacancies would be compensated by newly produced interstitials. H interstitials are also easy to move and the implanted H atoms could be stabilized by V Zn , V O and their complex 7,17,19 . All this would result in a shrink of the lattice and improvement of the crystallinity of ZnO nanorods as that shown in Figure 3.Figure 3XRD patterns of ZnO nanorod arrays before and after H + ion irradiation.…”
Section: Resultsmentioning
confidence: 99%
“…Obviously, dynamic process of ZnO during ion implantation would affect the defect stability and the crystal properties. Thermal annealing effect of ZnO nanorod arrays during photoluminescence (PL) measurement has been reported 19 , indicating that the nanostructures are more sensitive to dynamic annealing. Nanorods/nanowires represent an exclusive and sensitively system for analyzing ion implantation phenomena and bring about significant changes in their properties 11,24 .…”
This work reports the study on the evolution of native defects in ZnO nanorods irradiated with hydrogen ion. ZnO nanorod arrays grown vertically on silicon substrates were irradiated by 180 keV H+ ions to a total fluence of 8.50 × 1015 ions/cm2. The X-ray diffraction spectra, photoluminescence spectra before and after irradiation and the real-time ionoluminescence spectra of the nanorod arrays during the irradiating process were measured. Formation and evolution of defects during H+ ion irradiation and effects of irradiation on the crystal structure and optical property were studied. Blue shift of exciton emission, shrink of lattice c and improvement of the crystallinity of ZnO nanorods after irradiation were observed. Simple surface passivation of the nanorods could improve the radiation resistance. Formation and evolution of the defects during H+ ion irradiation could be clarified into four stages and the related models are provided.
“…They attributed it to the reduction of the built-in electric field induced by excited carriers 32 . However, a red shift of the UV emission was observed in ZnO nanorods grown with similar method to this work 19,33 . Alvi et al .…”
Section: Resultssupporting
confidence: 73%
“…Then the remaining vacancies would be compensated by newly produced interstitials. H interstitials are also easy to move and the implanted H atoms could be stabilized by V Zn , V O and their complex 7,17,19 . All this would result in a shrink of the lattice and improvement of the crystallinity of ZnO nanorods as that shown in Figure 3.Figure 3XRD patterns of ZnO nanorod arrays before and after H + ion irradiation.…”
Section: Resultsmentioning
confidence: 99%
“…Obviously, dynamic process of ZnO during ion implantation would affect the defect stability and the crystal properties. Thermal annealing effect of ZnO nanorod arrays during photoluminescence (PL) measurement has been reported 19 , indicating that the nanostructures are more sensitive to dynamic annealing. Nanorods/nanowires represent an exclusive and sensitively system for analyzing ion implantation phenomena and bring about significant changes in their properties 11,24 .…”
This work reports the study on the evolution of native defects in ZnO nanorods irradiated with hydrogen ion. ZnO nanorod arrays grown vertically on silicon substrates were irradiated by 180 keV H+ ions to a total fluence of 8.50 × 1015 ions/cm2. The X-ray diffraction spectra, photoluminescence spectra before and after irradiation and the real-time ionoluminescence spectra of the nanorod arrays during the irradiating process were measured. Formation and evolution of defects during H+ ion irradiation and effects of irradiation on the crystal structure and optical property were studied. Blue shift of exciton emission, shrink of lattice c and improvement of the crystallinity of ZnO nanorods after irradiation were observed. Simple surface passivation of the nanorods could improve the radiation resistance. Formation and evolution of the defects during H+ ion irradiation could be clarified into four stages and the related models are provided.
“…Zinc Oxide (ZnO), as a non-toxic and bio-compatible semiconductor material, with a wide band gap (3.37 eV) and high exciton binding energy (60 meV) at room temperature, has been widely investigated as gas sensor [1][2][3][4], solar cells [5][6][7], fluorescence enhancing [8], light emitting devices [9], polariton lasers [10,11] and so on. Hitherto, such as spheres [12,1,2,13], nanorods [14][15][16], nanosheets [17,18], nanowires [19], nanowhiskers [5] and nanotubes [20,21] have been explored.…”
“…Modifications and essential improvements of effective properties of zinc oxide can also be achieved through the formation of composite structures that combine different phases of zinc and magnesium oxides. These can be core-shell structures [3,4], or ZnO nanowire arrays, coated with a continuous MgO (ZnMgO) film [5]. Typically, the synthesis of such structures is carried out in several stages using various deposition methods.…”
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