Ensemble Monte Carlo simulation of 4H-SiC for electrons mobility calculation

Kovalchuk, Andrii; Wozny, Janusz; Lisik, Zbigniew; Podgorski, Jacek; Bugalski, Piotr; Lobur, Mykhaylo; Kosobutskyy, Petro

doi:10.1109/memstech.2018.8365705

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Electron Mobility1

The Effect Of Variation In the Dos1

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Cited by 2 publications

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“…We show this effect in Ref. [5]. The mobility for the incomplete ionization (8) The BH and CW scattering rates as a function of the donor concentration model is slightly higher.…”

Section: Electron Mobilitymentioning

confidence: 81%

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Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states

et al. 2021

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We carry out Monte Carlo simulations of electron transport in 4H-silicon carbide (4H-SiC) based on the numerically calculated density of states (DOS) to obtain the electron mobility at low electric fields. From the results, it can be concluded that a correct calculation of the DOS requires a very dense wavevector k-mesh when low electron kinetic energies are considered. The crucial issue is the numerical efficiency of the DOS calculation. We investigate the scaling efficiency when different numbers of cores are used.

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“…We show this effect in Ref. [5]. The mobility for the incomplete ionization (8) The BH and CW scattering rates as a function of the donor concentration model is slightly higher.…”

Section: Electron Mobilitymentioning

confidence: 81%

“…The scattering rate is an increasing function of the DOS, as shown by Eqs. (1)(2)(3)(4)(5)(6). Underestimating the DOS leads to lower scattering rates and higher values of the calculated mobility.…”

Section: The Effect Of Variation In the Dosmentioning

confidence: 99%