2018
DOI: 10.1016/j.snb.2017.10.127
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Enumeration of circulating tumor cells and investigation of cellular responses using aptamer-immobilized AlGaN/GaN high electron mobility transistor sensor array

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Cited by 31 publications
(17 citation statements)
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“…Nevertheless, the absolute values of the ∆V T shift remained approximately the same (Figure 8). A similar influence of the change in matrix on the signal direction was already observed by Pulikkathodi et al [53], who obtained an opposite response of circulating tumour cell detection in PBS and cell culture mediums. The author and his co-authors observed that this influence is due to divalent cation (Ca 2+ and Mg 2+ ) presence in the culture cell medium.…”
Section: Resultssupporting
confidence: 81%
“…Nevertheless, the absolute values of the ∆V T shift remained approximately the same (Figure 8). A similar influence of the change in matrix on the signal direction was already observed by Pulikkathodi et al [53], who obtained an opposite response of circulating tumour cell detection in PBS and cell culture mediums. The author and his co-authors observed that this influence is due to divalent cation (Ca 2+ and Mg 2+ ) presence in the culture cell medium.…”
Section: Resultssupporting
confidence: 81%
“…The use of gDNA allows for the extraction of enormous amounts of data from a small number of cells without the need for genome amplification. In another study, Pulikkathodi et al developed an AlGaN/GaN high-electron-mobility (HEMT) biosensor array for the detection and isolation of CTCs [165]. Furthermore, these chips are mounted on a thermoscurable polymeric substrate.…”
Section: Biological Interaction-based Isolationmentioning
confidence: 99%
“…Meanwhile, compound semiconductor-based AlGaN/GaN high electron mobility transistors (HEMTs) exhibit low on-resistance and rapid switching speeds owing to the high-mobility two-dimensional electron gas induced by the discontinuity of the conduction band in the AlGaN/GaN heterostructure and its piezoelectric polarization [10]. In addition, AlGaN/GaN HEMT-based sensors have shown potential for application for the detection of DNA, antigens, glucose, cellular responses, and gas; further, these sensors can be monolithically integrated with signal processing and amplification circuits or radio frequency (RF) signal transmission circuits, which are convenient for reading data and receiving remote signals [11][12][13][14][15][16][17][18]. Nevertheless, the leakage current of AlGaN/GaN HEMTs due to the trap-assisted tunneling and surface state is crucial.…”
Section: Introductionmentioning
confidence: 99%