Epitaxial CdTe films on GaAs/Si and GaAs substrates

Abstract

Epitaxial films of GaAs on (100)silicon were used as substrates for the preparation of high quality epitaxial layers of (100)CdTe, using a simple ultrahigh vacuum technique. Conditions were defined for the consistent formation of the (100)CdTe on (100)GaAs or GaAs/Si. Double crystal x-ray diffraction rocking curves for the GaAs films on Si have shown full width at half maximum as low as 20 s of arc. Both the CdTe and GaAs films are structurally stable to multiple thermal shocks between 80 K and room temperatures, and to elevated temperatures in the range of 400 to 600 °C.

Hetero-epitaxial crystal growth of CdTe on GaAs substrates

“…Vapour deposition methods such as molecular beam epitaxy (MBE) [2], metal-organic chemical vapour phase epitaxy (MOVPE) [3] and hot-wall epitaxy (HWE) [4] have shown the capability of producing epitaxial high-quality CdTe films. However, MBE is not technically suitable for growing thick films nor is it cost effective.…”

Thick epitaxial CdTe films grown by close space sublimation on Ge substrates

“…Figure 2 is the x-ray rocking curve of the film (∼200 µm), and although there is some evidence of mosaic or subgrain structure within a surface region of ∼6 mm 2 , the FWHM values of the profiling peak is ∼100 arcsec, comparable to that in CdTe epilayers grown on GaAs(1 0 0) by MBE [9] or HWE [4]. The angle formed by two neighbouring subgains is about 20 arcsec.…”

Close-spaced sublimation growth of homo- and hetero-epitaxial CdTe thick films

“…Vapour deposition methods such as molecular beam epitaxy (MBE) [2], metal-organic chemical vapour phase epitaxy (MOVPE) [3] and hot-wall epitaxy (HWE) [4] have shown the capability of producing epitaxial high-quality CdTe films. However, MBE is not technically suitable for thick films nor is it cost-effective.…”