2008
DOI: 10.1016/j.jcrysgro.2007.12.043
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Close-spaced sublimation growth of homo- and hetero-epitaxial CdTe thick films

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Cited by 15 publications
(8 citation statements)
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References 15 publications
(21 reference statements)
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“…Therefore, CSS method is widely used for the deposition of CdTe films [1,8,9,17,18]. This technique has many variants [1]: sublimation of compound with the inert carrier gas (Ar, N 2 ) [13,14], vacuum sublimation with [8] or without hot-walls [9,17,19].…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, CSS method is widely used for the deposition of CdTe films [1,8,9,17,18]. This technique has many variants [1]: sublimation of compound with the inert carrier gas (Ar, N 2 ) [13,14], vacuum sublimation with [8] or without hot-walls [9,17,19].…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, either powder or bulk source materials can be used to grow single crystal layers. 17,18 Apart from CdZnTe, CSS is also suitable for the epitaxy of several other important optoelectronic materials such as SiC 19 and AlN. 20 The idea of growing semiconductor films through CSS was first proposed by Nicoll 21 in 1963.…”
Section: Introductionmentioning
confidence: 99%
“…al. 18 adopted a lower deposition rate for the nucleation stage and then increased it for prolonged deposition of the film. We find that epitaxial CdZnTe films can be obtained in one step at high growth rates with the proper control of the growth conditions.…”
Section: Introductionmentioning
confidence: 99%
“…Alternatively, the use of CSS for CdTe epitaxial growth on GaAs and CdTe substrates has been investigated in a limited fashion. 25 In this study, the potential to grow CdTe epitaxial films on CdTe(111)B substrates was explored, using the conventional CSS reactor illustrated in Fig. 1.…”
Section: Introductionmentioning
confidence: 99%