Epitaxial CeO2 buffer layer on deliberately miscut sapphire for microcrack-free thick YBa2Cu3O7−δ films

The importance of CeO2 growth temperature and its post-annealing for the improvement of the microwave surface resistance of DyBa2Cu3Oz films

“…The increase in rms value might be due to the higher mobility of the evaporated species at high T ðCeO 2 Þ . Similar trend was observed for Df, Do, and rms roughness by the authors previously on CeO 2 on vicinal r-Al 2 O 3 [18].…”

“…Optimization studies on PLD grown CeO 2 buffer layer revealed that there exists a critical temperature for the growth of CeO 2 , T ðCeO 2 Þ [which is found to be 800-820 1C (in this and previous study [18])], below which the crystalline quality of CeO 2 would not be improved merely by the post-annealing. Importantly, the morphology of as-grown CeO 2 films for T ðCeO 2 Þ o820 C is comprised of longitudinal grains that are interlocked orthogonal to each other, which led to the formation of corrugated structure upon annealing.…”

“…In line with this, among the DBCO films on annealed CeO 2 , the R s value for T ðCeO 2 Þ ¼ 745 C is still $45% higher than the value obtained for all other T ðCeO 2 Þ . Therefore, it can be said that in order to obtain a high quality DBCO films on cbs, the postannealing of the CeO 2 buffer layer at high temperatures will alone not be sufficient, but also an optimum T ðCeO 2 Þ [ T ðCeO 2 Þ is found to be 800-820 1C (in this and previous study [18])] is needed. This is further supported by the absence of Laue oscillations in the 2y/o scan for CeO2 grown at T ðCeO 2 Þ o780 C in Fig.…”

EuBa2Cu3O7 films grown on vicinal R-Al2O3 substrates with CeO2 buffer layers by magnetron sputtering

“…1a. Minute grains were observed in the sputtering method as well as the PLD method [6]. Also, the difference of surface morphologies of CeO 2 buffer layers deposited on a tilted and a non-tilted R-Al 2 O 3 substrate could not be observed.…”

Size Effects on the Electrical Conductivity of Ceria: Achieving Low Space Charge Potentials in Nanocrystalline Thin Films

“…Supporting Information). On the one hand this is astonishing given that the relevant Al 2 O 3 [112̅0] axis is 12% larger compared with the CeO 2 [100] axis (CeO 2 [100], 5.41 Å; Al 2 O 3 [112̅0], 4.76 Å; Al 2 O 3 [1̅101], 5.21 Å) . However, on the other hand there are many studies in the literature reporting epitaxial growth of CeO 2 on Al 2 O 3 ⟨11̅02⟩ (e.g.…”