2015
DOI: 10.1016/j.tsf.2014.11.040
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Epitaxial Cu 2 ZnSnSe 4 thin films and devices

Abstract: Epitaxial Cu 2 ZnSnSe 4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different secondary phases are present in the epitaxial layer. The main secondary phases are Cu 2 SnSe 3 and ZnSe which grow epitaxially on top of the CZTSe. Transmission electron microscopy measurements show that the epitaxial CZTSe grows predominantly parallel to the c-direction. Epitaxial CZTSe solar cells with a maxim… Show more

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Cited by 5 publications
(2 citation statements)
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“…In the context of CZTSe solar cells, the presence of secondary phases, notably ZnSe and MoSe 2 , poses challenges related to increased series resistance, potentially impeding the efficient flow of current [141,142]. SnSe 2 adversely impacted solar cell performance by diminishing shunt resistance [112].…”
Section: Influence Of Secondary Phases On the Solar Device Efficiencymentioning
confidence: 99%
“…In the context of CZTSe solar cells, the presence of secondary phases, notably ZnSe and MoSe 2 , poses challenges related to increased series resistance, potentially impeding the efficient flow of current [141,142]. SnSe 2 adversely impacted solar cell performance by diminishing shunt resistance [112].…”
Section: Influence Of Secondary Phases On the Solar Device Efficiencymentioning
confidence: 99%
“…Previously epitaxial thin films were grown by molecular beam epitaxy 5,6 on gallium arsenide (001) (GaAs) substrates. GaAs was chosen for epitaxial growth because the lattice mismatch between CZTSe and the substrate is about only 0:6 %.…”
Section: Introductionmentioning
confidence: 99%