Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation

Hong, M.; Kwo, J.; Kortan, A. R.; Mannáerts, J. P.; Sergent, A. M.

doi:10.1126/science.283.5409.1897

Cited by 413 publications

(160 citation statements)

References 14 publications

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“…At present, it is generally believed that VBO or CBO in ideal MOS device should be greater than 1 eV. 6,[70][71][72][73][74] It is noted that the VBO or CBO calculated by HSE for different MoS 2 thickness is greater than 1 eV. Therefore, we believe that metal/a-Al 2 O 3 /MoS 2 MOS can be an ideal device.…”

Section: Resultsmentioning

confidence: 80%

First principles calculations of the interface properties of a-Al2O3/MoS2 and effects of biaxial strain

Shi

Xiu

et al. 2017

Journal of Applied Physics

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Al 2 O 3 is a potential dielectric material for metal-oxide-semiconductor (MOS) devices. Al 2 O 3 films deposited on semiconductors usually exhibit amorphous due to lattice mismatch. Compared to two-dimensional graphene, MoS 2 is a typical semiconductor, therefore, it has more extensive application. The amorphousAl 2 O 3 /MoS 2 (a-Al 2 O 3 /MoS 2 ) interface has attracted people's attention because of its unique properties. In this paper, the interface behaviors of a-Al 2 O 3 /MoS 2 under non-strain and biaxial strain are investigated by first principles calculations based on density functional theory (DFT). First of all, the generation process of a-Al 2 O 3 sample is described, which is calculated by molecular dynamics and geometric optimization. Then, we introduce the band alignment method, and calculate band offset of a-Al 2 O 3 /MoS 2 interface. It is found that the valence band offset (VBO) and conduction band offset (CBO) change with the number of MoS 2 layers. The dependence of leakage current on the band offset is also illustrated. At last, the band structure of monolayer MoS 2 under biaxial strain is discussed. The biaxial strain is set in the range from -6% to 6% with the interval of 2%. Impact of the biaxial strain on the band alignment is investigated.

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Section: Resultsmentioning

confidence: 80%

First principles calculations of the interface properties of a-Al2O3/MoS2 and effects of biaxial strain

Shi

Xiu

et al. 2017

Journal of Applied Physics

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“…8 cm -2 eV -1 ). 14 But, still LaLuO 3 has a fairly large lattice mismatch with respect to GaAs (-3.8%), and another concern is that Lu is one of the rarest elements on earth, which would be problematic for large scale fabrication.…”

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confidence: 96%

“…However, growing epitaxial oxides on GaAs is rather challenging, since GaAs is neither chemically stable nor thermally stable: GaAs can be oxidized easily to form low quality surface oxides that compromise the interface quality; 5 and GaAs starts to lose As over 400 ˚C. 6 Hong et al 7,8 have demonstrated a method of using in-situ electron beam evaporation to grow epitaxial (Ga,Gd) 2 8 which suggests the importance of epitaxy in reducing interfacial defects. 9 However, the frequency dispersion of the capacitance was still fairly large, 8 and the drive current of the inversion-mode MOSFETs made from (Ga,Gd) 2 O 3 /GaAs was less than 1 mA/mm.…”

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confidence: 99%

Heteroepitaxy of La₂O₃ and La_2–xY_xO₃ on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density

et al. 2013

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GaAs metal–oxide–semiconductor devices historically suffer from Fermi-level pinning, which is mainly due to the high trap density of states at the oxide/GaAs interface. In this work, we present a new way of passivating the interface trap states by growing an epitaxial layer of high-k dielectric oxide, La2–x Y x O3, on GaAs(111)A. High-quality epitaxial La2–x Y x O3 thin films are achieved by an ex situ atomic layer deposition (ALD) process, and GaAs MOS capacitors made from this epitaxial structure show very good interface quality with small frequency dispersion and low interface trap densities (D it). In particular, the La2O3/GaAs interface, which has a lattice mismatch of only 0.04%, shows very low D it in the GaAs bandgap, below 3 × 1011 cm–2 eV–1 near the conduction band edge. The La2O3/GaAs capacitors also show the lowest frequency dispersion of any dielectric on GaAs. This is the first achievement of such low trap densities for oxides on GaAs.

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“…However starting from the 8th layer and above the stacking order is that of bulk Gd 2 O 3 . The fact that the Gd 2 O 3 film structure is well adapted to the GaAs structure close to the interface suggests that this film will have good passivation properties as confirmed for thinner films [6].…”

Section: Discussionmentioning

confidence: 74%

Direct Determination of the Stacking Order in Gd₂O₃ Epi-Layers on GaAs

Yacoby

Sowwan

Pindak³

et al. 2002

MRS Proc.

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We have used Coherent Bragg Rod Analysis (COBRA) to investigate the atomic structure of a 5.6 nm thick Gd 2 O 3 film epitaxially grown on a (100) GaAs substrate. COBRA is a method to directly obtain the structure of systems periodic in two-dimensions by determining the complex scattering factors along the substrate Bragg rods. The system electron density and atomic structure are obtained by Fourier transforming the complex scattering factors into real space. The results show that the stacking order of the first seven Gd 2 O 3 film layers resembles the stacking order of Ga and As layers in GaAs then changes to the stacking order of cubic bulk Gd 2 O 3 . This behavior is distinctly different from the measured stacking order in a 2.7 nm thick Gd 2 O 3 in which the GaAs stacking order persists throughout the entire film.

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Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation

Cited by 413 publications

References 14 publications

First principles calculations of the interface properties of a-Al2O3/MoS2 and effects of biaxial strain

First principles calculations of the interface properties of a-Al2O3/MoS2 and effects of biaxial strain

Heteroepitaxy of La₂O₃ and La_2–xY_xO₃ on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density

Direct Determination of the Stacking Order in Gd₂O₃ Epi-Layers on GaAs

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Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation

Cited by 413 publications

References 14 publications

First principles calculations of the interface properties of a-Al2O3/MoS2 and effects of biaxial strain

First principles calculations of the interface properties of a-Al2O3/MoS2 and effects of biaxial strain

Heteroepitaxy of La2O3 and La2–xYxO3 on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density

Direct Determination of the Stacking Order in Gd2O3 Epi-Layers on GaAs

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About

Heteroepitaxy of La₂O₃ and La_2–xY_xO₃ on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density

Direct Determination of the Stacking Order in Gd₂O₃ Epi-Layers on GaAs