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X-ray powder patterns obtained from three different types of 35–40 Å CdSe nanoclusters are analyzed. We simulate the effects of thermal fluctuations, stacking faults, surface reconstructions, and bond compressions on powder patterns of CdSe clusters using the Debye formula. We find that the spectra of capped and annealed CdSe particles grown in inverse micelles are best fit by a mixture of crystalline structures intermediate between zinc-blende and wurtzite. We describe a new preparation for CdSe clusters, the structure of which appears to be well-defined wurtzite with, on average, less than one stacking fault per cluster. Thermal effects are found to be important and to mask the subtle effects of likely surface and core reconstructions.

Meissner-eA'ect and microwave-absorption measurements on bulk samples show that Rb"C60is superconducting with a maximum transition temperature of 28 K. This is a 10-K (60%) increase over the Kdoped material. Only Ba06K04Bi03 and the cuprate superconductors have higher transition temperatures.

Epitaxial growth of single-crystal gadolinium oxide dielectric thin films on gallium arsenide is reported. The gadolinium oxide film has a cubic structure isomorphic to manganese oxide and is (110)-oriented in single domain on the (100) gallium arsenide surface. The gadolinium oxide film has a dielectric constant of approximately 10, with low leakage current densities of about 10(-9) to 10(-10) amperes per square centimeter at zero bias. Typical breakdown field is 4 megavolts per centimeter for an oxide film 185 angstroms thick and 10 megavolts per centimeter for an oxide 45 angstroms thick. Both accumulation and inversion layers were observed in the gadolinium oxide-gallium arsenide metal oxide semiconductor diodes, using capacitance-voltage measurements. The ability to grow thin single-crystal oxide films on gallium arsenide with a low interfacial density of states has great potential impact on the electronic industry of compound semiconductors.