Epitaxial ferroelectric Y-doped HfO<sub>2</sub> film grown by the RF magnetron sputtering

Suzuki, Taisei; Shiraishi, Takashi; Mimura, Takanori; Uchida, Hiroshi; Funakubo, Hiroshi

doi:10.7567/jjap.57.11uf15

Cited by 20 publications

(17 citation statements)

References 33 publications

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“…This result, which suggests that oxygen vacancies are convenient to stabilize the metastable orthorhombic phase, are in agreement with observations done with polycrystalline films [46][47] and epitaxial films obtained by RTA of amorphous films. 45 Mimura et al 48 confirmed ferroelectricity by polarization loops, with high Pr of 14.5 µC/cm 2 in films on ITO/YSZ (111), and much lower polarization in films on ITO/YSZ(001). Although it is known that some fluorite oxides as CeO2 can grow epitaxially at room temperature, 49 the result reported by Mimura et al 48 was surprising and further studies are required to understand the mechanism that allow epitaxial growth of the metastable phase at room temperature.…”

Section: Solid Phase Epitaxymentioning

confidence: 95%

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Epitaxial Ferroelectric HfO₂ Films: Growth, Properties, and Devices

Fina

Sánchez

2021

ACS Appl. Electron. Mater.

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About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films, there is tremendous interest in this material and ferroelectric oxides are once again in the spotlight of the memories industry. Great efforts are being made to understand and control ferroelectric properties. Epitaxial films, which have fewer defects and a more controlled microstructure than polycrystalline films, can be very useful for this purpose. Epitaxial films of ferroelectric HfO2 have been much less investigated, but after the first report in 2015 significant progress has been achieved. This review summarizes and discusses the main advances on epitaxial HfO2, considering growth, study of structural and ferroelectric properties, identification of the ferroelectric phase, and fabrication of devices. We hope this review will help to researchers investigating epitaxial HfO2. It can also help extend the interest of the ferroelectric HfO2 community, now basically focused on polycrystalline samples, to epitaxial films.

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Section: Solid Phase Epitaxymentioning

confidence: 95%

“…Suzuki et al investigated the influence of the atmosphere in sputtering at room temperature and rapid thermal annealing for crystallization. They deposited Hf 0.93 Y 0.07 O 2 films, around 24 nm thick, by RF magnetron sputtering under 200 mTorr of pure Ar or Ar/O 2 = 100.…”

Section: Solid Phase Epitaxymentioning

confidence: 99%

Epitaxial Ferroelectric HfO₂ Films: Growth, Properties, and Devices

Fina

Sánchez

2021

ACS Appl. Electron. Mater.

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“…Apart from PLD, radio frequency sputtering has also been successful in fabricating epitaxial hafnia thin films on 10 wt% Sn-doped In 2 O 3 (ITO)/YSZ, usually grown at room temperature followed by rapid thermal annealing. [33,40,78] Given most of the results were obtained via PLD, mainly epitaxial hafnia thin films grown by PLD were discussed in the following.…”

Section: Epitaxial Hafnia Thin Filmmentioning

confidence: 99%

An Overview of Ferroelectric Hafnia and Epitaxial Growth

Cao

Shi

Zhu

et al. 2021

Physica Rapid Research Ltrs

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Hafnia thin films have been under intensive research during the past few years due to its robust ferroelectricity under very thin limit and good compatibility with silicon. The polar crystal structure critical to ferroelectricity in hafnia thin films is metastable, and is generally obtained in polycrystalline thin films, coexisting with other nonpolar phases. Recently, much attention has been focused on epitaxial ferroelectric hafnia thin films to get rid of the nonpolar phases, to investigate the more intrinsic factors to ferroelectricity, and its potential applications. Herein, recent progress on the growth of epitaxial hafnia thin films is reviewed. The epitaxial growth mechanism is explored, in particular, the interface matching, phase stability under temperature and oxygen pressure, followed by discussions on thickness dependency of ferroelectricity, and wake-up effect in hafnia. Finally, an outlook on ferroelectric hafnia both on fundamental studies and future applications is discussed.

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“…In order to solve these problems, other deposition methods, including physical vapor deposition (PVD), chemical solution deposition (CSD) and PLD have been explored [21,43] . A comparison of these methods is shown in Table 2 [63,[103][104][105][106] .…”

Section: Film Deposition Methodsmentioning

confidence: 99%

Microstructural evolution and ferroelectricity in HfO2 films

Zhao¹,

Chen²,

Liao³

2022

Microstructures

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Ferroelectric (FE) materials, which typically adopt the perovskite structure with non-centrosymmetry and exhibit spontaneous polarization, are promising for applications in memory, electromechanical and energy storage devices. However, these advanced applications suffer from the intrinsic limitations of perovskite FEs, including poor complementary metal oxide semiconductor (CMOS) compatibility and environmental issues associated with lead. Hafnium oxide (HfO2), with stable bulk centrosymmetric phases, possesses robust ferroelectricity in nanoscale thin films due to the formation of non-centrosymmetric phases. Owing to its high CMOS compatibility and high scalability, HfO2 has attracted significant attention. In the last decade, significant efforts have been made to explore the origin of the ferroelectricity and factors that influence the FE properties in HfO2 films, particularly regarding the role of microstructure, which is vital in clarifying these issues. Although several comprehensive reviews of HfO2 films have been published, there is currently no review focused on the relationship between microstructure and FE properties. This review focuses on the microstructure-property relationships in FE polycrystalline and epitaxial HfO2 films. The crystallographic structures and characterization methods for HfO2 polymorphs are first discussed. For polycrystalline HfO2 films, the microstructure-FE properties relationships, driving force and kinetic pathway of phase transformations under growth parameters or external stimuli are reviewed. For epitaxial films, the lattice matching relations between HfO2 films and substrates and the corresponding impact on the FE properties are discussed. The FE properties between polycrystalline and epitaxial HfO2 films are compared based on their different microstructural characteristics. Finally, a future perspective is given for further investigating FE HfO2 films.

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Epitaxial ferroelectric Y-doped HfO₂ film grown by the RF magnetron sputtering

Cited by 20 publications

References 33 publications

Epitaxial Ferroelectric HfO₂ Films: Growth, Properties, and Devices

Epitaxial Ferroelectric HfO₂ Films: Growth, Properties, and Devices

An Overview of Ferroelectric Hafnia and Epitaxial Growth

Microstructural evolution and ferroelectricity in HfO2 films

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Epitaxial ferroelectric Y-doped HfO2 film grown by the RF magnetron sputtering

Cited by 20 publications

References 33 publications

Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices

Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices

An Overview of Ferroelectric Hafnia and Epitaxial Growth

Microstructural evolution and ferroelectricity in HfO2 films

Contact Info

Product

Resources

About

Epitaxial ferroelectric Y-doped HfO₂ film grown by the RF magnetron sputtering

Epitaxial Ferroelectric HfO₂ Films: Growth, Properties, and Devices

Epitaxial Ferroelectric HfO₂ Films: Growth, Properties, and Devices