Epitaxial films of metals from the platinum group (Ir, Rh, Pt and Ru) on YSZ-buffered Si(111)

Gsell, S.; Fischer, Martin C.; Schreck, M.; Stritzker, B.

doi:10.1016/j.jcrysgro.2009.04.034

Cited by 55 publications

(64 citation statements)

References 37 publications

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“…6 The substrate is a single crystalline Rh(111) film, which is grown on a Si(111) wafer with an yttria-stabilized zirconia (YSZ) buffer layer. 7 The silicon wafer provides an inexpensive starting material, which is available with high quality and fits industrial standards. The mosaic spread of the oxide buffer layer is typically higher than 1…”

Section: Cvd Growth Of H-bn/rh(111) On Four-inch Substratesmentioning

confidence: 99%

“…• , can be obtained by applying a two-step growth process as described in detail by Gsell et al 7 Under these conditions, a certain minimum thickness is required before the initially isolated metal islands growing in Volmer-Weber mode coalesce and form a closed film. A thickness of 150 nm has been found as a good compromise to achieve a closed flat film.…”

Section: Cvd Growth Of H-bn/rh(111) On Four-inch Substratesmentioning

confidence: 99%

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High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers

Hemmi

Bernard

Cun

et al. 2014

Review of Scientific Instruments

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The setup of an apparatus for chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported. It provides well-controlled preparation conditions, such as oxygen and argon plasma assisted cleaning and high temperature annealing. In situ characterization of a wafer is accomplished with target current spectroscopy. A piezo motor driven x-y stage allows measurements with a step size of 1 nm on the complete wafer. To benchmark the system performance, we investigated the growth of single layer h-BN on epitaxial Rh(111) thin films. A thorough analysis of the wafer was performed after cutting in atmosphere by low energy electron diffraction, scanning tunneling microscopy, and ultraviolet and X-ray photoelectron spectroscopies. The apparatus is located in a clean room environment and delivers high quality single layers of h-BN and thus grants access to large area UHV processed surfaces, which had been hitherto restricted to expensive, small area single crystal substrates. The facility is versatile enough for customization to other UHV-CVD processes, e.g., graphene on four-inch wafers.

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Section: Cvd Growth Of H-bn/rh(111) On Four-inch Substratesmentioning

confidence: 99%

Section: Cvd Growth Of H-bn/rh(111) On Four-inch Substratesmentioning

confidence: 99%

High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers

Hemmi

Bernard

Cun

et al. 2014

Review of Scientific Instruments

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“…All diamond films were grown on Ir/YSZ/Si(001) using similar conditions to those described in previous works [12,[19][20][21]. Before the in situ growth rate measurements, an intrinsic heteroepitaxial diamond layer of $1 mm thickness was deposited in a separate reactor on the Ir/YSZ/Si(001) stack using a microwave power of 2 kW at 40 mbar in an atmosphere of 1.5% CH 4 in H 2 with 100 ppm N 2 .…”

Section: à2mentioning

confidence: 99%

Mutual interaction of N, B, and O during heteroepitaxial diamond growth: Triggering the nitrogen induced growth acceleration

Sartori

Schreck

2014

Physica Status Solidi (a)

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The mutual interaction of N, B, and O during heteroepitaxial diamond growth by microwave plasma chemical vapour deposition (MPCVD) is investigated. The study comprises in situ growth rate measurements by laser reflection interferometry (LRI) and the monitoring of impurity containing gas phase species like CN and BH by optical emission spectroscopy (OES). In the gas phase, among the combinations (N, B), (N, O), and (B, O) only the latter pair shows a measurable mutual influence. In contrast, growth rate measurements reveal a strong interaction also for the couple (N, B). It is found that the high growth rate enhancement obtainable by nitrogen addition is completely suppressed by boron contamination at ppm levels. At even lower boron concentrations a step‐like behaviour is observed, i.e., the nitrogen is initially inactive before it develops its effect above a defined threshold concentration. Addition of oxygen to the gas mixture proves to be an effective method to push this threshold to lower nitrogen concentrations and to trigger the action of nitrogen even in highly contaminated reactors. We estimate that the presence of 1 boron atom can cancel the effect of 1000 nitrogen atoms in the gas phase.

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“…Similar polycrystalline platinum films had been prepared on (1 0 0) orientated Si with an YSZ buffer layer by Hesse et al [14] via sputtering. Later, single crystalline platinum films on (1 1 1) Si with an YSZ and Ir buffer layer were also prepared by Gsell et al [15] and on (1 1 1) YSZ with a nanometre thick titanium adhesion layer by Trassin et al [16] by PLD. In addition, Opitz and Fleig [17] sputter deposited comparable polycrystalline platinum films on (1 0 0) YSZ at high substrate temperatures.…”

Section: Introductionmentioning

confidence: 99%

Microstructure of platinum films on YSZ prepared by pulsed laser deposition

Beck

Pöpke

Luerßen

et al. 2011

Journal of Crystal Growth

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Epitaxial films of metals from the platinum group (Ir, Rh, Pt and Ru) on YSZ-buffered Si(111)

Cited by 55 publications

References 37 publications

High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers

High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers

Mutual interaction of N, B, and O during heteroepitaxial diamond growth: Triggering the nitrogen induced growth acceleration

Microstructure of platinum films on YSZ prepared by pulsed laser deposition

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