Epitaxial Graphene on SiC: 2D Sheets, Selective Growth, and Nanoribbons

Berger, Claire; Deniz, Dogukan; Gigliotti, Jamey; Palmer, James; Hankinson, John; Hu, Yisheng; Turmaud, Jean-Philippe; Puybaret, Renaud; Ougazzaden, A.; Sidorov, Anton; Jiang, Zhigang; Heer, Walt A. de

doi:10.1201/9781315186153-6

Cited by 6 publications

(19 citation statements)

References 39 publications

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“…SiC dies were outgassed at 800 °C prior to ramping to growth temperatures between 1400 and 1600 °C for 10–30 min, depending on the desired morphology. Incomplete graphene layers were also grown on 4H-SiC natural steps separated by large atomically flat terraces (5–20 μm) . For comparison, bare CMP 4H-SiC chips were also processed together with the graphene samples in the same MOVPE deposition runs.…”

Section: Methodsmentioning

confidence: 99%

“…Incomplete graphene layers were also grown on 4H-SiC natural steps separated by large atomically flat terraces (5−20 μm). 48 For comparison, bare CMP 4H-SiC chips were also processed together with the graphene samples in the same MOVPE deposition runs. The above-mentioned graphene morphologies (single and multilayers, partially grown layers, and nanostructures) were used for h-BN film growth.…”

Section: Methodsmentioning

confidence: 99%

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Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition

Gigliotti

Deniz

et al. 2020

ACS Nano

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The realization of high-performance nanoelectronics requires control of materials at the nanoscale. Methods to produce high quality epitaxial graphene (EG) nanostructures on silicon carbide are known. The next step is to grow van der Waals semiconductors on top of EG nanostructures. Hexagonal boron nitride (h-BN) is a wide bandgap semiconductor with a honeycomb lattice structure that matches that of graphene, making it ideally suited for graphene-based nanoelectronics. Here, we describe the preparation and characterization of multilayer h-BN grown epitaxially on EG using a migration-enhanced metalorganic vapor phase epitaxy process. As a result of the lateral epitaxial deposition (LED) mechanism, the grown h-BN/EG heterostructures have highly ordered epitaxial interfaces, as desired in order to preserve the transport properties of pristine graphene. Atomic scale structural and energetic details of the observed row-by-row growth mechanism of the two-dimensional (2D) epitaxial h-BN film are analyzed through first-principles simulations, demonstrating one-dimensional nucleation-free-energy-barrierless growth. This industrially relevant LED process can be applied to a wide variety of van der Waals materials.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition

Gigliotti

Deniz

et al. 2020

ACS Nano

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“…Details about the full furnace design and operating conditions can be found in Ref. [597,615]. The Si escape rate that ultimately determines the growth rate, is defined by the geometry of the hole (diameter 0.5 to 2 mm) [597,615].…”

Section: Iv12 Near Equilibrium Confinement Controlled Growthmentioning

confidence: 99%

“…[597,615]. The Si escape rate that ultimately determines the growth rate, is defined by the geometry of the hole (diameter 0.5 to 2 mm) [597,615]. The rate of graphene formation by CCS can be reduced by a factor >1000 compared to UHV sublimation, where 1LG grows on the C-face in ~1 min at T = 1.200 °C [597].…”

Section: Iv12 Near Equilibrium Confinement Controlled Growthmentioning

confidence: 99%

Production and processing of graphene and related materials

et al. 2020

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We present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures. We adopt a ‘hands-on’ approach, providing practical details and procedures as derived from literature as well as from the authors’ experience, in order to enable the reader to reproduce the results. Section is devoted to ‘bottom up’ approaches, whereby individual constituents are pieced together into more complex structures. We consider graphene nanoribbons (GNRs) produced either by solution processing or by on-surface synthesis in ultra high vacuum (UHV), as well carbon nanomembranes (CNM). Production of a variety of GNRs with tailored band gaps and edge shapes is now possible. CNMs can be tuned in terms of porosity, crystallinity and electronic behaviour. Section covers ‘top down’ techniques. These rely on breaking down of a layered precursor, in the graphene case usually natural crystals like graphite or artificially synthesized materials, such as highly oriented pyrolythic graphite, monolayers or few layers (FL) flakes. The main focus of this section is on various exfoliation techniques in a liquid media, either intercalation or liquid phase exfoliation (LPE). The choice of precursor, exfoliation method, medium as well as the control of parameters such as time or temperature are crucial. A definite choice of parameters and conditions yields a particular material with specific properties that makes it more suitable for a targeted application. We cover protocols for the graphitic precursors to graphene oxide (GO). This is an important material for a range of applications in biomedicine, energy storage, nanocomposites, etc. Hummers’ and modified Hummers’ methods are used to make GO that subsequently can be reduced to obtain reduced graphene oxide (RGO) with a variety of strategies. GO flakes are also employed to prepare three-dimensional (3d) low density structures, such as sponges, foams, hydro- or aerogels. The assembly of flakes into 3d structures can provide improved mechanical properties. Aerogels with a highly open structure, with interconnected hierarchical pores, can enhance the accessibility to the whole surface area, as relevant for a number of applications, such as energy storage. The main recipes to yield graphite intercalation compounds (GICs) are also discussed. GICs are suitable precursors for covalent functionalization of graphene, but can also be used for the synthesis of uncharged graphene in solution. Degradation of the molecules intercalated in GICs can be triggered by high temperature treatment or microwave irradiation, creating a gas pressure surge in graphite and exfoliation. Electrochemical exfoliation by applying a voltage in an electrolyte to a graphite electrode can be tuned by varying precursors, electrolytes and potential. Graphite electrodes can be either negatively or positively intercalated to obtain GICs that are subsequently exfoliated. We also discuss the materials that can be amenable to exfoliation, by ...

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“…The epiGNRs studied in this work were selectively grown along the zigzag direction on the sidewalls of insulating 4H-SiC substrates by the confinement controlled sublimation method. 13,16 Before the growth, the SiC(0001) face was pre-patterned with 30-nm-deep trenches using electron-beam lithography and SF 6 -O 2 plasma etch. The expected width of epiGNRs is then $66 nm, determined by the trench depth and the sidewall facet angle (which is 27 from the basal plane).…”

mentioning

confidence: 99%

1/f Noise in epitaxial sidewall graphene nanoribbons

Vail

Hankinson

Berger

et al. 2020

Applied Physics Letters

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We perform gate-and temperature-dependent low-frequency noise measurements on epitaxial graphene nanoribbons (epiGNRs) grown on the sidewalls of trenches etched in SiC substrates. We find that the measured noise spectra are dominated by 1=f noise, and the main source of the noise at high carrier densities is the long-range scatters (charge traps) at the epiGNR/gate-dielectric interface. Interestingly, our findings differentiate sidewall epiGNRs from previously studied lithographically patterned GNRs while exhibiting competitive noise characteristics similar to those in high-quality suspended graphene or graphene on hexagonal boron nitride substrates. These results provide confidence in potential epiGNR-based device applications in low-noise nanoelectronics.

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Epitaxial Graphene on SiC: 2D Sheets, Selective Growth, and Nanoribbons

Cited by 6 publications

References 39 publications

Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition

Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition

Production and processing of graphene and related materials

1/f Noise in epitaxial sidewall graphene nanoribbons

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