Epitaxial graphene three-terminal junctions

Abstract

We report on the fabrication and characterization of graphene three-terminal junctions with nanometer dimensions. The devices have been realized in epitaxial graphene on semi-insulating silicon carbide. All current-carrying device parts consist of graphene resulting in all-carbon structures. Pronounced voltage rectification and frequency multiplication have been observed at room temperature.

Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping

“…3(b) was obtained by fitting the data with a parabolic function around V in ¼ 0 V. It abruptly increased when V BG approached 1 V, and its polarity completely switched at 1 V. The maximum curvature was 1.8 when V BG ¼ 2.0 V. This value was the same to that of the epitaxial graphene TBJ at RT (Ref. 13) and was five times higher than the previously reported value measured at 4 K. 12 Figure 3(c) shows the input branch currents simultaneously measured with the voltage transfer curve in Fig. 3(a).…”

“…Recently, RT operation in 30 nm-graphene TBJ was reported. 13 However, the ambipolar property was not investigated. In this letter, we present a graphene-based TBJ device exhibiting clear nonlinear voltage transfer characteristics and their gate control at RT.…”

Planar nanowire transistors from two-dimensional materials

“…The etching was carried out in O 2 plasma. Hall measurements were carried out providing mobilities of 1010 cm 2 /Vs comparable to earlier investigations [8].…”

Subthreshold swings below 60 mV/dec in three-terminal nanojunctions at room temperature

“…12,13 Recently, T-shaped nanojunctions have been proposed and demonstrated as efficient monolithic rectifiers and become subject of intense research activities. [14][15][16][17][18][19][20] In these three-terminal nanojunctions (TTJs), which consist of a narrow channel connecting two electron reservoirs and an additional branch monolithically attached to the center of the channel, stable rectification, due to ballistic transport, has been reported up to frequencies of a few THz. [21][22][23][24] Interestingly, also transistor-like behavior was observed, although the transistor operation is realized without a specific insulation layer between the gate and the channel of the device.…”