Planar nanowire transistors from two-dimensional materials

Hähnlein, Bernd; Alsioufy, Mohamad Adnan; Lootze, M.; Jacobs, Heiko O.; Schwierz, Frank; Pezoldt, Jörg

doi:10.1016/j.mssp.2015.07.068

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Gnr Side‐gate Fets1

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Cited by 2 publications

(3 citation statements)

References 19 publications

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“…The transconductances of the measured devices reached values up to 450 mS/mm [14,15]. The transconductance is affected by the number of the layer in the epitaxial graphene [15]. The obtained values are comparable to transconductances obtained for graphene MOSFETs typically approaching values in the range between 100 and 600 mS/mm.…”

Section: Resultssupporting

confidence: 59%

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Amplification in Graphene Nanoribbon Junctions

Pezoldt

Hähnlein

Jacobs

et al. 2016

MSF

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Section: Resultssupporting

confidence: 59%

“…The transconductances of the measured devices reached values up to 450 mS/mm [14,15]. The transconductance is affected by the number of the layer in the epitaxial graphene [15].…”

Section: Resultsmentioning

confidence: 91%

Amplification in Graphene Nanoribbon Junctions

Pezoldt

Hähnlein

Jacobs

et al. 2016

MSF

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“…In 2012, our group reported the first experimental study on the performance of side‐gate GNR FETs in terms of the transconductance g m and demonstrated that epitaxial GNR side‐gate devices behave competitive compared to graphene top‐gate MOSFETs . More investigations detailed followed soon after …”

Section: Gnr Side‐gate Fetsmentioning

confidence: 99%

Graphene Nanoribbons for Electronic Devices

et al. 2017

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Graphene nanoribbons show unique properties and have attracted a lot of attention in the recent past. Intensive theoretical and experimental studies on such nanostructures at both the fundamental and application-oriented levels have been performed. The present paper discusses the suitability of graphene nanoribbons devices for nanoelectronics and focuses on three specific device types -graphene nanoribbon MOSFETs, side-gate transistors, and three terminal junctions. It is shown that, on the one hand, experimental devices of each type of the three nanoribbon-based structures have been reported, that promising performance of these devices has been demonstrated and/or predicted, and that in part they possess functionalities not attainable with conventional semiconductor devices. On the other hand, it is emphasized that -in spite of the remarkable progress achieved during the past 10 yearsgraphene nanoribbon devices still face a lot of problems and that their prospects for future applications remain unclear.

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Planar nanowire transistors from two-dimensional materials

Cited by 2 publications

References 19 publications

Amplification in Graphene Nanoribbon Junctions

Amplification in Graphene Nanoribbon Junctions

Graphene Nanoribbons for Electronic Devices

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