Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications

Meli, Alessandro; Muoio, A.; Trotta, Antonio; Meda, L.; Parisi, M.; Via, F. La

doi:10.3390/ma14040976

Cited by 16 publications

(10 citation statements)

References 35 publications

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“…From the literature, three additional peaks located at 420, 460 and 480 nm have been detected that provide evidence of recombination at various stacking faults [10][11][12]. Similarly, in other previous work, peaks at 390, 424 and 540 nm were observed from the PL mapping of a 4H-SiC sample.…”

Section: Property 3c-sic 4h-sic 6h-sicsupporting

confidence: 70%

Effect of Microindentation on Electroluminescence of SiC P-I-N Junctions

Zhang

Kitai

2022

Materials

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The influence of microindentation on the electroluminescence of silicon carbide was studied in forward-biased 4H SiC p-i-n junctions. Four spectral regions at approximately 390, 420, 445 and 500 nm initially observed on virgin samples strongly depend, in regard to magnitude, on the condition of the starting die. These spectral regions may be interpreted as arising from either phonon-assisted band-to-band transitions or from defect-related transitions. The same SiC die were then subjected to mechanical damage brought about by a series of closely spaced microindentations directed approximately perpendicular to the c-axis. The spectra taken after a first set and subsequently a second set of microindentations are distinct from the initial spectra in all cases, and differences are interpreted as being due to the modification of existing defects or additional defects being generated mechanically. The influence of microindentation on the ideality factor is measured and discussed. Measured light flux with respect to a standard light source is also shown at each microindentation stage.

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Section: Property 3c-sic 4h-sic 6h-sicsupporting

confidence: 70%

Effect of Microindentation on Electroluminescence of SiC P-I-N Junctions

Zhang

Kitai

2022

Materials

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“…2b it is possible to observe the diffusion length data, calculated using time resolved photoluminescence (TRPL) for the lifetime calculation. The diffusion length values are higher than the epi-layer thickness for our samples [12] with an optimized epitaxial process, while in the case of other epitaxial growth processes, the diffusion length is close to thickness of the epitaxial layer or even lower. Then with a good epitaxial process the diffusion length does not seems to be the limiting factor in the increase of the epitaxial layer thickness and of the neutron sensitivity.…”

Section: Resultsmentioning

confidence: 63%

Neutron Detection Study through Simulations with Fluka

Muoio

Meli

Trotta³

et al. 2022

MSF

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In this work the purpose of the simulations is to optimize a new large volume Silicon Carbide (SiC) detector for 14.1 MeV neutrons. The device has an active thickness obtained by epitaxial growth and an active area of 25 mm2. In the first step of the simulations we compare SiC detector performance to Diamond and Silicon detectors, with the same geometric features. In the second step of the simulations we have found the best solution to improve the response of the detector for a fixed epitaxial layer thickness using an overlayer of aniline (C6H7N).

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“…Among the numerous SiC polytypes, 4H-SiC has been the power device choice due to the availability of high-quality epitaxial wafers . Due to the hexagonal lattice of 4H-SiC, anisotropies in the different crystal directions should be considered.…”

Section: Methods Descriptionmentioning

confidence: 99%

“…Among the numerous SiC polytypes, 4H-SiC has been the power device choice due to the availability of high-quality epitaxial wafers. 33 Due to the hexagonal lattice of 4H-SiC, anisotropies in the different crystal directions should be considered. In this model, the effect of anisotropy of the SiC crystal is considered in the phase field gradient constant ε, which depends on the angle of the interface θ:…”

Section: Initialmentioning

confidence: 99%

Numerical Modeling of the Cellular Structure Formation Process in SiC Solution Growth for Suppression of Solvent Inclusions

Zhou

Miura

Dang

et al. 2023

Crystal Growth & Design

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For the solution growth of silicon carbide, solvent inclusions are significant technological issues, and methods to suppress the formation of solvent inclusions are investigated in this study. Experimental observations show that solvent inclusions are formed behind the cellular structures. A phase field model is used to reproduce the formation process of cellular structures and solvent inclusions. Simulation results indicate that slight perturbations of the step front can convert into cellular structures in the case of insufficient supply of carbon, and the overdeveloped cellular structures consequently result in solvent inclusions. Accordingly, several schemes can be suggested by the simulation model to suppress the formation of cellular structures by enhancing the carbon supply. By increasing the carbon diffusion coefficient, cellular structures can be suppressed. Moreover, the step height and the solution flow direction also play an important role in suppressing the cellular structures. This study provides a comprehensive understanding of the formation process of cellular structures and solvent inclusions. A growth process with a high diffusion coefficient and opposite solution flow to the step flow direction was proposed to suppress the formation of cellular structures. The proposed numerical model could be applied in other solution crystal growth methods.

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Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications

Cited by 16 publications

References 35 publications

Effect of Microindentation on Electroluminescence of SiC P-I-N Junctions

Effect of Microindentation on Electroluminescence of SiC P-I-N Junctions

Neutron Detection Study through Simulations with Fluka

Numerical Modeling of the Cellular Structure Formation Process in SiC Solution Growth for Suppression of Solvent Inclusions

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