2016
DOI: 10.1039/c6ra09928a
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Epitaxial growth and metallicity of rutile MoO2thin film

Abstract: Molybdenum oxides have various crystal structures and physical properties due to the multiple valence states of the 4d molybdenum. Among them, MoO2 has a distorted rutile structure with chemical stability and metallic behavior. In this study we grew epitaxial (100) MoO2 thin films on (0001) Al2O3 substrates. Through careful control of the Ar-partial pressure and growth temperature, we determined the optimal growth condition. From our structural assessments, MoO2 epitaxial thin films with high crystallinity can… Show more

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Cited by 33 publications
(28 citation statements)
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“…The poor conductivity of MoS 2 could mean that the transport step becomes rate-limiting, and hence compromises the overall efficiency. On the other hand, MoO 2 has been shown to possess metallic properties [40] with low electrical resistivity. The bulk and surface MoO 2 content (shown by XRD/TEM/XPS) may permit efficient charge transport and less potential drop.…”
Section: Resultsmentioning
confidence: 99%
“…The poor conductivity of MoS 2 could mean that the transport step becomes rate-limiting, and hence compromises the overall efficiency. On the other hand, MoO 2 has been shown to possess metallic properties [40] with low electrical resistivity. The bulk and surface MoO 2 content (shown by XRD/TEM/XPS) may permit efficient charge transport and less potential drop.…”
Section: Resultsmentioning
confidence: 99%
“…An interesting feature of MoO2 is that its metallic ground state (electrical resistivity 6.9 × 10 -4 Ω cm) (Fig. 35c) [454]. The d orbital can be separated into two sub-bands, i.e., t2g and eg bands by the crystal field.…”
Section: Structurementioning
confidence: 99%
“…Here we show that thicker (>5 nm) precursor MoO 2 films lead to heavier texture in the converted MoS 2 films. The reason for using MoO 2 as a precursor film is because of its ability to grow continuous ultrathin film epitaxially on high‐temperature stable substrates . In order to eliminate texture from the MoS 2 films and achieve single‐crystalline MoS 2 , we developed a new process to improve the crystalline quality of the epitaxial precursor MoO 2 film.…”
Section: Introductionmentioning
confidence: 99%
“…The reason for using MoO 2 as a precursor film is because of its ability to grow continuous ultrathin film epitaxially on high-temperature stable substrates. [26][27][28] In order to eliminate texture from the MoS 2 films and achieve single-crystalline MoS 2 , we developed a new process to improve the crystalline quality of the epitaxial precursor MoO 2 film. This annealing process is henceforth referred to as the capping layer annealing process (CLAP).…”
mentioning
confidence: 99%