Epitaxial growth and structure of CdS films evaporated onto Ge

Abdalla, M. I.; Holt, D. B.; Wilcox, D.M.

doi:10.1007/bf00550465

Cited by 13 publications

(8 citation statements)

References 18 publications

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“…The level of perfection of these films is similar to that of the other II-VI compound films (Abdalla et al, 1973;Holt and Abdalla, 1974;Holt and Woodcock, 1970). It is also similar to the best levels reported for other heteroepitaxial films.…”

Section: Introductionsupporting

confidence: 86%

Characterization of Cadmium Selenide Thin Film for Solar Cell Application

Alamgir

Pervaiz

Arif

2011

Energy Sources, Part A: Recovery, Utilization, and Environmenta

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Thin films of cadmium selenide were prepared by thermal evaporation. The films were grown at different substrate temperatures ranging from room temperature to 300 ı C. All the films were grown under similar conditions (i.e., the chamber pressure and source current were held constant). The films were characterized optically, electrically, and structurally. The result of optical and electrical investigation shows that these films are suitable for solar cell applications. The conductivity of the film increases with the increase in substrate temperature, hence increase in grain size. These films possess low value of resistivity, and band gap lies in the range that is suitable for the said purpose.

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Section: Introductionsupporting

confidence: 86%

Characterization of Cadmium Selenide Thin Film for Solar Cell Application

Alamgir

Pervaiz

Arif

2011

Energy Sources, Part A: Recovery, Utilization, and Environmenta

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“…Similar deposition cut-off temperatures were observed to occur in all previously investigated II-VI/IV combinations (1)(2)(3)(4)6). Similar deposition cut-off temperatures were observed to occur in all previously investigated II-VI/IV combinations (1)(2)(3)(4)6).…”

Section: Resultssupporting

confidence: 85%

“…4(b). This form of contrast in dark and bright areas of jig-saw-puzzle shape, led to this type of structure being termed a domain-form faulted structure in previous cases (2,4). 5(a).…”

Section: Resultsmentioning

confidence: 99%

“…Previous work in this program has dealt with the growth and structure of films of CdS on Ge (1,2), ZnTe on Ge (3), and CdTe on Ge (4). Previous work in this program has dealt with the growth and structure of films of CdS on Ge (1,2), ZnTe on Ge (3), and CdTe on Ge (4).…”

mentioning

confidence: 99%

“…Previous work in this program has dealt with the growth and structure of films of CdS on Ge (1,2), ZnTe on Ge (3), and CdTe on Ge (4). A domain-form {111} faulted structure was found in the CdTe films grown on (110) surfaces (2,4). A domain-form {111} faulted structure was found in the CdTe films grown on (110) surfaces (2,4).…”

mentioning

confidence: 99%

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Epitaxial Growth and Structure of CdSe Evaporated in Vacuum onto Ge

Gejji

Holt

1975

J. Electrochem. Soc.

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Films of CdSe were grown by focused electron beam evaporation in vacua in the 10 -6 Torr range on the three singular faces of Ge. The structures of the films were examined by transmission electron microscopy. On (100) oriented substrates, epitaxy was obtained throughout the range of substrate temperatures from 35() ~ to 450~ and the films had the sphalerite structure in parallel alignment with the Ge. The diffraction patterns contained no satellite spots but <111> streaks were present. On (110) oriented substrates the epitaxial growth range of temperatures was 300~176The films again had basically the sphalerite structure in (110) orientation but the domain-form faulted structure was found in all the films. On (111) Ge surfaces, CdSe grew epitaxially at all temperatures from 350 ~ to 450~ and had the sphalerite structure in (111) orientation. Streaks but no satellite spots were observed in the electron diffraction patterns. Well-defined rosettes of Moire spots were observed in the transmission electron diffraction patterns of areas where comparable thicknesses of CdSe and Ge were present in the cases of both (100) and (111) substrates. These Moire diffraction patterns confirmed the parallel alignment of the films on (100) substrates but showed that on (111) substrates the films were azimuthally rotated through a small angle from the parallel orientation.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.132.123.28 Downloaded on 2015-05-15 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.132.123.28 Downloaded on 2015-05-15 to IP Vol. I22,No. 4

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Epitaxial growth and structure of films of CdTe evaporated in vacuum on to silicon

Holt

Abdalla

1974

Phys. Stat. Sol. (a)

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CdTe was evaporated on to (111) surfaces of Xi in an oil-pumped vacuum systcm in pressures in the Torr range. Reproducible epitaxial growth was obtained at all substrate temperatures in the range from 400 to 520 O C . Above this temperature no film could be deposited. The films had the wurtzite structure and the epitaxial orientation relationship was (0001) CdTe parallel to (111) Si with [llZO] CdTe parallel to [I101 Si. The films grown at temperatures in the range from 400 to 500 "C gave transmission electron diffraction patterns that were free of both satellite spots and streaks. This indicated that these films were free both of three-dimensional defects such as twirls and included grains of second phase material and of high densities of planar defects such a s stacking faults. The films grown a t temperatures above 500 "C gave diffraction patterns containing (lOi0) streaks due to faults on the prismatic planes { lOI0).Auf (111)-Oberflgchen von Si wurde in einem Olpumpen-Vakuumsystem bei Driicken im lo-' Tom-Bereich CdTe aufgedampft. Reproduzierbares Epitaxiewachstum wurde bei allen Substrattemperaturen im Bereich von 400 bis 520 "C erhalten. Oberhalb dieser Temperatur konnte keine Schicht aufgebracht werden. Die Schichten hatten Wurtzit-Struktur nnd die Epitaxie-Richtung war (0001) CdTe parallel zu (111) Si mit [llZO] CdTe parallel zu [ l i O ] Si. Schichten, die bei Temperaturen zwischen 400 und 500 "C gewachsen waren, ergaben Transmissions-Elektronenbeugungsdiagramme, die frei von Satellitenpunkten nnd -streifen waren. Dies zeigt, daB diese Schichten sowohl frei sind von drcidimensionalen Storungen, wie Zwillingsgrenzen und EinschluBgrenzen einer zweiten Phase, als auch von ebenen Defekten hoher Dichte, wie Stapelfehlern. Schichten, die oberhalb 500 "C gewachsen waren, ergaben Beugungediagramme mit (lOiO)-Streifen, hervorgerufen durch Stapelfehler auE den { lOI0}-PriamenfIachen,

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Epitaxial growth and structure of CdS films evaporated onto Ge

Cited by 13 publications

References 18 publications

Characterization of Cadmium Selenide Thin Film for Solar Cell Application

Characterization of Cadmium Selenide Thin Film for Solar Cell Application

Epitaxial Growth and Structure of CdSe Evaporated in Vacuum onto Ge

Epitaxial growth and structure of films of CdTe evaporated in vacuum on to silicon

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