Epitaxial growth of (111)ZrN thin films on (111)Si substrate by reactive sputtering and their surface morphologies

Yanagisawa, Hideto; Shinkai, Satoko; Sasaki, Katsutaka; Sakùrai, Jun; Abe, Yoshio; Sakai, Akira; Zaima, Shigeaki

doi:10.1016/j.jcrysgro.2006.09.013

Cited by 11 publications

(8 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 3 It is well known that this double diffraction often appears when the film has a large lattice mismatch but has been epitaxially grown on the substrate. 12) Summarizing these results, the Ag layer has been epitaxially grown on Si(111) substrate; the epitaxial relationships are Ag(111) k Si(111) and Ag[110] k Si[110], which are consistent with the previous report. 13) Next, we report on the dependence of morphology of Co particles on the kind of buffer layers.…”

Section: Resultssupporting

confidence: 86%

Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth

Oida¹,

Sakai

Nakatsuka³

et al. 2008

jjap

Self Cite

View full text Add to dashboard Cite

The effect of Ag buffer layers epitaxially grown on Si(111) substrates on the growth of carbon nanotubes (CNTs) has been investigated. We have examined the morphology of Co particles deposited on the epitaxial Ag layer and SiO2, and that of CNTs grown on the epitaxial Ag layer and SiO2. In this study, the epitaxial Ag buffer layer was stable during CNT growth. The density of Co particles on the epitaxial Ag layer was higher than that on SiO2 and the mean diameter of Co particles on the epitaxial Ag layer was smaller than that on SiO2. Furthermore, the diameter distribution of Co particles on the epitaxial Ag layer was narrower than that on SiO2. According to these results of diameter distribution of Co, the density of CNTs grown on the epitaxial Ag layer was higher than that on SiO2. From these results, the epitaxial Ag layer is suitable as an electrode of a CNT device.

show abstract

Section: Resultssupporting

confidence: 86%

Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth

Oida¹,

Sakai

Nakatsuka³

et al. 2008

jjap

Self Cite

View full text Add to dashboard Cite

show abstract

“…Bright-field transmission electron microscopy (BF-TEM) of ZrC 0.67 N 0.33 (figure 5a) reveals a core-rim particle structure, which may arise from Z contrast from different stoichiometries present at the surface, either via destabilisation of ZrC forming ZrC 1−x or growth of a ZrC x N y layer on the surface of a ZrN particle. The SAED pattern of the particle (figure 5b [21]. It can also be seen from the high resolution images (figures 5a,c) that there is registry between the lattice fringes in the core and rim of the particle.…”

Section: Powder Characterisationmentioning

confidence: 68%

On the fabrication of ZrC x N y from ZrO 2 via two-step carbothermic reduction–nitridation

Harrison

Rapaud

Pradeilles

et al. 2015

Journal of the European Ceramic Society

View full text Add to dashboard Cite

This study examined the processing parameters of a two-step carbothermal reduction-nitridation of ZrO 2 as a UO 2 /PuO 2 simulant to fabricate ZrN. Variables studied were the reaction time, reaction temperature and the starting powder composition Higher temperatures, longer reaction times and higher initial amounts of carbon in the starting material lead to increased nitridation similar to previous work with uranium oxide but that reaction rate decreases with time. SEM and TEM of the reacted powders reveal regions of ZrC with ledges indicative of crystal defects with small particles of ZrN growing on the ZrC bulk material suggesting a reaction that occurs via Zr transport to the reaction site either through mass diffusion or evaporation-condensation of Zr (g) and with N 2(g) forming the nitride. Annealing experiments on these mixed phases shows formation of a solid solution is rapid compared to the nitridation, where there is no formation of a mixed phase.

show abstract

“…ZrN coatings and films can be prepared by a variety of methods, such as chemical vapor deposition, reactive sputtering, ion beam sputtering, pulsed laser deposition, and plasma nitridation. [2][3][4][5] The microstructure and physical properties of the ZrN films depend on the deposition method applied. [6][7][8][9] The reduction and nitridation of ZrO 2 is also a possible way to synthesize ZrN.…”

Section: Introductionmentioning

confidence: 99%

“…Because of these properties, ZrN is widely used in industry as a wear-resistant coating for steel tools, protective layer on vessels, and diffusion barrier in IC technology. ZrN coatings and films can be prepared by a variety of methods, such as chemical vapor deposition, reactive sputtering, ion beam sputtering, pulsed laser deposition, and plasma nitridation. − The microstructure and physical properties of the ZrN films depend on the deposition method applied. − …”

Section: Introductionmentioning

confidence: 99%

Polycrystalline ZrN_1-xC_x Layers with (111) Preferred Orientation Prepared by the Carbothermal Nitridation of ZrO₂ Ceramics

Liu

Chen

et al. 2008

Crystal Growth & Design

View full text Add to dashboard Cite

Polycrystalline ZrN 1-x C x layers have been prepared by the carbothermal nitridation of consolidated ZrO 2 ceramics. Thermodynamic analysis indicates that the formation of ZrN 1-x C x is favored by increasing the reaction temperature and the pressure of N 2 . The kinetics in the carbothermal nitridation is studied, and the overall reaction is considered to be controlled by the infiltration and diffusion of gaseous reactants. From the surface to the center, the sample shows a porosity gradient due to the difference in reaction degree. A strong (111) preferred orientation is observed in the as-synthesized ZrN 1-x C x layers, which is enhanced at elevated temperatures and higher pressures of N 2 . It is proposed that the growth of ZrN 1-x C x crystals takes place by the two-dimensional nucleation and growth mechanism.

show abstract

Epitaxial growth of (111)ZrN thin films on (111)Si substrate by reactive sputtering and their surface morphologies

Cited by 11 publications

References 24 publications

Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth

Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth

On the fabrication of ZrC x N y from ZrO 2 via two-step carbothermic reduction–nitridation

Polycrystalline ZrN_1-xC_x Layers with (111) Preferred Orientation Prepared by the Carbothermal Nitridation of ZrO₂ Ceramics

Contact Info

Product

Resources

About

Epitaxial growth of (111)ZrN thin films on (111)Si substrate by reactive sputtering and their surface morphologies

Cited by 11 publications

References 24 publications

Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth

Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth

On the fabrication of ZrC x N y from ZrO 2 via two-step carbothermic reduction–nitridation

Polycrystalline ZrN1-xCx Layers with (111) Preferred Orientation Prepared by the Carbothermal Nitridation of ZrO2 Ceramics

Contact Info

Product

Resources

About

Polycrystalline ZrN_1-xC_x Layers with (111) Preferred Orientation Prepared by the Carbothermal Nitridation of ZrO₂ Ceramics