Epitaxial Growth of 6 in. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition

Zhang, Xuefu; Wu, Tianru; Jiang, Qi; Wang, Huishan; Zhu, Hailong; Chen, Zhiying; Jiang, Ruijiao; Niu, Tianchao; Li, Zhuojun; Zhang, Youwei; Qiu, Zhijun; Yu, Guanghui; Li, Ang; Qiao, Shuang; Wang, Haomin; Yu, Qingkai; Xie, Xiaoming

doi:10.1002/smll.201805395

Cited by 81 publications

(80 citation statements)

References 47 publications

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“…An epitaxial growth approach for wafer-sized monolayer graphene on Cu-Ni alloy was reported by Zhang et al [30]. In this report, Cu-Ni films were deposited onto α-Al 2 O 3 (0001) wafer, and the subsequent annealing process allowed single crystallization of Cu-Ni (111)-oriented texture as well as the reduction of surface roughness (Figure 1a).…”

Section: Synthesis Of Graphene On Cu-ni Alloymentioning

confidence: 95%

Overview of Rational Design of Binary Alloy for the Synthesis of Two-Dimensional Materials

Zhang

Shi

et al. 2020

Surfaces

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Two-dimensional (2D) materials attracted widespread interest as unique and novel properties different from their bulk crystals, providing great potential for semiconductor devices and applications. Recently, the family of 2D materials has been expanded including but not limited to graphene, hexagonal boron nitride (h-BN), transition metal carbides (TMCs), and transition metal dichalcogenides (TMDCs). Metal-catalyzed chemical vapor deposition (CVD) is an effective method to achieve precise synthesis of these 2D materials. In this review, we focus on designing various binary alloys to realize controllable synthesis of multiple CVD-grown 2D materials and their heterostructures for both fundamental research and practical applications. Further investigations indicated that the design of the catalytic substrate is an important issue, which determines the morphology, domain size, thickness and quality of 2D materials and their heterostructures.

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Section: Synthesis Of Graphene On Cu-ni Alloymentioning

confidence: 95%

Overview of Rational Design of Binary Alloy for the Synthesis of Two-Dimensional Materials

Zhang

Shi

et al. 2020

Surfaces

Self Cite

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“…For example, it has been widely acknowledged that certain kinds of alloy based on Cu provides special merits that allow the precise control of the layer number and domain size, and realize fast growth. [55][56][57] Compared to the Cu substrate, the alloy can be relatively more inexpensive, while further promoting the development of fabrication techniques. The best substrate would be comprehensively determined by the quality and performance of the derived 2D materials, as well as their processability and cost.…”

Section: Perspectives and Prospectsmentioning

confidence: 99%

Recent Advances in Growth of Large‐Sized 2D Single Crystals on Cu Substrates

Fan

Liu

et al. 2020

Advanced Materials

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benefits over other approaches, including mechanical exfoliation, epitaxial growth on SiC substrate, reduction of graphene oxides and molecular self-assembly. It has been widely recognized that the approach for scaled fabrication of 2D materials should have advantages both on quantities and quality for further advanced industrial uses. [8-10] In brief, CVD can make largescale and high-quality of 2D materials on a metal substrate at high temperature. The key point of the CVD approach lies in that it can realize fine control over nucleation and growth stages of 2D materials by purposely modulating CVD growth parameters. Currently, the reported size of single-crystal 2D materials has been reached up to meterscale, [11] paving the way toward industrial production and scaled applications. In the whole CVD growth process for 2D materials, there usually exist several para meters that can largely affect the final growth of materials, such as temperature, pressure, gas flow rate, catalyst and growth time and so on. Of all those parameters, the catalysts have been considered as the most important one for fabrication of large-sized and high-quality 2D materials. [12-14] Two reasons are recognized to support the viewpoint, both of which are highly related to the nucleation and growth stages of 2D crystals. Graphene growth on surface of catalysts is taken as an example. Large-scale and high-quality 2D materials have been an emerging and promising choice for use in modern chemistry and physics owing to their fascinating property profile. The past few years have witnessed inspiringly progressing development in controlled fabrication of large-sized and singlecrystal 2D materials. Among those production methods, chemical vapor deposition (CVD) has drawn the most attention because of its fine control over size and quality of 2D materials by modulating the growth conditions. Meanwhile, Cu has been widely accepted as the most popular catalyst due to its significant merit in growing monolayer 2D materials in the CVD process. Herein, very recent advances in preparing large-sized 2D single crystals on Cu substrates by CVD are presented. First, the unique features of Cu will be given in terms of ultralow precursor solubility and feasible surface engineering. Then, scaled growth of graphene and hexagonal boron nitride (h-BN) crystals on Cu substrates is demonstrated, wherein different kinds of Cu surfaces have been employed. Furthermore, the growth mechanism for the growth of 2D single crystals is exhibited, offering a guideline to elucidate the in-depth growth dynamics and kinetics. Finally, relevant issues for industrialscale mass production of 2D single crystals are discussed and a promising future is expected.

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“…With the very large single‐crystal Cu (111) substrate, combining the adjacent oxide‐assisted ultrafast growth technique and the principle of the roll‐to‐roll (R2R) method (Figure E), the authors realized the growth of continuous single‐crystal graphene film with the dimension of 5 × 50 cm 2 and <1% unaligned grains (Figure F,G). Recently, Zhang et al reported the fabrication of wafer‐scale high‐quality wrinkle‐free single‐crystal graphene films on single‐crystal Cu/Ni (111)/sapphire wafers at ~750°C by seamless coalescence. The temperature was much lower than that of graphene epitaxial growth on Cu (111) (about 1000°C).…”

Section: Vapor‐phase Growth Of High‐quality Wafer‐scale 2d Materialsmentioning

confidence: 99%

“…A straightforward route is to grow up from a single seed, which is similar to silicon ingot growth . Another thoroughgoing approach is to make the multinucleation domains with identical orientation seamless coalesce into a wafer‐scale single‐crystal film, which can usually be achieved on a single‐crystal substrate or liquid substrate . The third effective one is the evolutionary selection growth (ESG) that can eliminate the formation of undesired seeds to get large‐area single‐crystal 2D materials, even on a polycrystalline substrate .…”

Section: Introductionmentioning

confidence: 99%

“…4,10,25 Another thoroughgoing approach is to make the multinucleation domains with identical orientation seamless coalesce into a wafer-scale single-crystal film, which can usually be achieved on a single-crystal substrate or liquid substrate. 5,11,26,27 The third effective one is the evolutionary selection growth (ESG) that can eliminate the formation of undesired seeds to get largearea single-crystal 2D materials, even on a polycrystalline substrate. 28 Considerable efforts have been dedicated toward the wafer-scale preparation of 2D materials with high quality.…”

Section: Introductionmentioning

confidence: 99%

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Vapor‐phase growth of high‐quality wafer‐scale two‐dimensional materials

Tong

Liu

Zeng

et al. 2019

InfoMat

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Emerging two‐dimensional (2D) materials have stimulated tremendous scientific and industrial interests due to their diverse and tunable physical, chemical, and mechanical properties. The scalable production of high‐quality wafer‐scale 2D materials has become significantly essential to bring us closer to practical industrial applications, particularly in electronic devices. Vapor‐phase growth provides attractive opportunities for the synthesis of large‐area and high‐quality 2D materials. In this review, we will emphasize vapor‐phase growth strategies from three aspects, including suppressing nucleation, seamless stitching, and evolutionary selection growth. We discuss the general understanding of the related fundamental mechanism and specific parameter optimization from precursors and substrate design to the adjusting of growth parameters (temperature and pressure). Meanwhile, we present other strategies to produce various kinds of wafer‐scale 2D materials. Finally, we conclude the current challenges and future directions in this developing field. This work may inspire researchers to better design routes in the synthesis of wafer‐scale 2D materials with high quality.

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Epitaxial Growth of 6 in. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition

Cited by 81 publications

References 47 publications

Overview of Rational Design of Binary Alloy for the Synthesis of Two-Dimensional Materials

Overview of Rational Design of Binary Alloy for the Synthesis of Two-Dimensional Materials

Recent Advances in Growth of Large‐Sized 2D Single Crystals on Cu Substrates

Vapor‐phase growth of high‐quality wafer‐scale two‐dimensional materials

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